Highly sensitive pressure sensor with silicon-on-nothing (SON) MOSFET for sensor integrated heterogeneous system

Hisashi Kino; Takafumi Fukushima; Tetsu Tanaka

doi:10.1109/SNW.2016.7578043

Highly sensitive pressure sensor with silicon-on-nothing (SON) MOSFET for sensor integrated heterogeneous system

Hisashi Kino, Takafumi Fukushima, Tetsu Tanaka

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

Abstract

MOSFETs have the potential to be-come a highly sensitive pressure sensor compared with conventional piezoresistive device such as doped Si. In this study, we have proposed a novel pressure sensor composed of silicon-on-nothing (SON) MOSET. It was clearly indicated that the SON-MOSFET had high gauge factor of 230 which was more than twice as high as conventional values. These results expedite developments and realization of sensor integrated heterogeneous system.

Original language	English
Title of host publication	2016 IEEE Silicon Nanoelectronics Workshop, SNW 2016
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	186-187
Number of pages	2
ISBN (Electronic)	9781509007264
DOIs	https://doi.org/10.1109/SNW.2016.7578043
Publication status	Published - 2016 Sept 27
Event	21st IEEE Silicon Nanoelectronics Workshop, SNW 2016 - Honolulu, United States Duration: 2016 Jun 12 → 2016 Jun 13

Publication series

Name	2016 IEEE Silicon Nanoelectronics Workshop, SNW 2016

Conference

Conference	21st IEEE Silicon Nanoelectronics Workshop, SNW 2016
Country/Territory	United States
City	Honolulu
Period	16/6/12 → 16/6/13

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10.1109/SNW.2016.7578043

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Kino, H., Fukushima, T., & Tanaka, T. (2016). Highly sensitive pressure sensor with silicon-on-nothing (SON) MOSFET for sensor integrated heterogeneous system. In 2016 IEEE Silicon Nanoelectronics Workshop, SNW 2016 (pp. 186-187). Article 7578043 (2016 IEEE Silicon Nanoelectronics Workshop, SNW 2016). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/SNW.2016.7578043

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title = "Highly sensitive pressure sensor with silicon-on-nothing (SON) MOSFET for sensor integrated heterogeneous system",

abstract = "MOSFETs have the potential to be-come a highly sensitive pressure sensor compared with conventional piezoresistive device such as doped Si. In this study, we have proposed a novel pressure sensor composed of silicon-on-nothing (SON) MOSET. It was clearly indicated that the SON-MOSFET had high gauge factor of 230 which was more than twice as high as conventional values. These results expedite developments and realization of sensor integrated heterogeneous system.",

author = "Hisashi Kino and Takafumi Fukushima and Tetsu Tanaka",

note = "Publisher Copyright: {\textcopyright} 2016 IEEE.; 21st IEEE Silicon Nanoelectronics Workshop, SNW 2016 ; Conference date: 12-06-2016 Through 13-06-2016",

year = "2016",

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day = "27",

doi = "10.1109/SNW.2016.7578043",

language = "English",

series = "2016 IEEE Silicon Nanoelectronics Workshop, SNW 2016",

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Kino, H , Fukushima, T & Tanaka, T 2016, Highly sensitive pressure sensor with silicon-on-nothing (SON) MOSFET for sensor integrated heterogeneous system. in 2016 IEEE Silicon Nanoelectronics Workshop, SNW 2016., 7578043, 2016 IEEE Silicon Nanoelectronics Workshop, SNW 2016, Institute of Electrical and Electronics Engineers Inc., pp. 186-187, 21st IEEE Silicon Nanoelectronics Workshop, SNW 2016, Honolulu, United States, 16/6/12. https://doi.org/10.1109/SNW.2016.7578043

Highly sensitive pressure sensor with silicon-on-nothing (SON) MOSFET for sensor integrated heterogeneous system. / Kino, Hisashi ; Fukushima, Takafumi ; Tanaka, Tetsu.
2016 IEEE Silicon Nanoelectronics Workshop, SNW 2016. Institute of Electrical and Electronics Engineers Inc., 2016. p. 186-187 7578043 (2016 IEEE Silicon Nanoelectronics Workshop, SNW 2016).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

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N2 - MOSFETs have the potential to be-come a highly sensitive pressure sensor compared with conventional piezoresistive device such as doped Si. In this study, we have proposed a novel pressure sensor composed of silicon-on-nothing (SON) MOSET. It was clearly indicated that the SON-MOSFET had high gauge factor of 230 which was more than twice as high as conventional values. These results expedite developments and realization of sensor integrated heterogeneous system.

AB - MOSFETs have the potential to be-come a highly sensitive pressure sensor compared with conventional piezoresistive device such as doped Si. In this study, we have proposed a novel pressure sensor composed of silicon-on-nothing (SON) MOSET. It was clearly indicated that the SON-MOSFET had high gauge factor of 230 which was more than twice as high as conventional values. These results expedite developments and realization of sensor integrated heterogeneous system.

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Highly sensitive pressure sensor with silicon-on-nothing (SON) MOSFET for sensor integrated heterogeneous system

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