TY - JOUR
T1 - Highly transparent thin-film transistors using wide-bandgap organic semiconductors and multilayer transparent electrodes
AU - Moon, Hanul
AU - Kim, Mincheol
AU - Cho, Hyunsu
AU - Takimiya, Kazuo
AU - Yoo, Seunghyup
N1 - Funding Information:
This work was supported by a National Research Foundation of Korea (NRF) grant funded by the South Korean government (MSIP) [CAFDC/Seunghyup Yoo/No. 2007-0056090], and by a grant [Code No. 2013073183] from the Center for Advanced Soft Electronics under the Global Frontier Research Program of the Ministry of Education, Science, and Technology, Republic of Korea.
PY - 2014/4
Y1 - 2014/4
N2 - Highly transparent organic thin-film transistors operable at low voltages were demonstrated using a wide-bandgap organic semiconductor for channel layers, metal-based multilayers for transparent source/drain (S/D) electrodes, and an ultrathin fluoropolymer for gate dielectric layers. The devices optimized for high transparency based on characteristic-matrix formalism exhibited transmittances over 85% for the channel region and over 70% for the S/D region in almost the entire visible range. The validity of the multilayer S/D contact and the ultrathin fluoropolymer dielectrics on indium tin oxide (ITO) gate electrodes for favourable electrical characteristics were also verified. The resultant transparent thin-film transistors showed a typical p-channel operation switchable under 2 V with ca. 0.72 cm2/V s mobility.
AB - Highly transparent organic thin-film transistors operable at low voltages were demonstrated using a wide-bandgap organic semiconductor for channel layers, metal-based multilayers for transparent source/drain (S/D) electrodes, and an ultrathin fluoropolymer for gate dielectric layers. The devices optimized for high transparency based on characteristic-matrix formalism exhibited transmittances over 85% for the channel region and over 70% for the S/D region in almost the entire visible range. The validity of the multilayer S/D contact and the ultrathin fluoropolymer dielectrics on indium tin oxide (ITO) gate electrodes for favourable electrical characteristics were also verified. The resultant transparent thin-film transistors showed a typical p-channel operation switchable under 2 V with ca. 0.72 cm2/V s mobility.
KW - fluoropolymer dielectrics
KW - multilayer transparent electrodes
KW - organic thin-film transistors
KW - transparent electronics
KW - wide-bandgap semiconductors
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U2 - 10.1080/15980316.2014.889612
DO - 10.1080/15980316.2014.889612
M3 - Article
AN - SCOPUS:84901806452
SN - 1598-0316
VL - 15
SP - 59
EP - 63
JO - Journal of Information Display
JF - Journal of Information Display
IS - 2
ER -