Highly Vt tunable and low variability triangular fin-channel MOSFETs on SOTB

Y. X. Liu; T. Matsukawa; K. Endo; S. O'uchi; J. Tsukada; H. Yamauchi; Y. Ishikawa; W. Mizubayashi; Y. Morita; S. Migita; H. Ota; M. Masahara

doi:10.1016/j.mee.2015.04.075

Highly V_t tunable and low variability triangular fin-channel MOSFETs on SOTB

Y. X. Liu, T. Matsukawa, K. Endo, S. O'uchi, J. Tsukada, H. Yamauchi, Y. Ishikawa, W. Mizubayashi, Y. Morita, S. Migita, H. Ota, M. Masahara

IFS - Global Collaborative Research and Education Center for Integrated Flow Science (IFS-GCORE)

National Institute of Advanced Industrial Science and Technology

Research output: Contribution to journal › Article › peer-review

Abstract

Abstract Triangular fin (Tri-Fin) channel double-gate (DG) MOSFETs were successfully fabricated on (1 0 0) SOTB wafers using orientation dependent wet etching, and their electrical characteristics were systematically compared to the rectangular fin (Rec-Fin) ones by RIE. Thanks to the wide bottom area and the suppressed line edge roughness of Tri-Fins by the wet process, a higher threshold voltage (V_t) tunability and a smaller V_t variation were obtained as compared to the Rec-Fin ones. Moreover, the wet processed Tri-Fin devices provide a damage-free BOX layer, which is useful for the fabrication of multiple V_t devices with an ultrathin BOX layer.

Original language	English
Article number	9898
Pages (from-to)	290-293
Number of pages	4
Journal	Microelectronic Engineering
Volume	147
DOIs	https://doi.org/10.1016/j.mee.2015.04.075
Publication status	Published - 2015 Nov 1

Keywords

Body effect factor
FinFET
SOTB
Threshold voltage (V)
Triangular fin

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10.1016/j.mee.2015.04.075

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@article{da483b1e66794652be5d86d573c23d5e,

title = "Highly Vt tunable and low variability triangular fin-channel MOSFETs on SOTB",

abstract = "Abstract Triangular fin (Tri-Fin) channel double-gate (DG) MOSFETs were successfully fabricated on (1 0 0) SOTB wafers using orientation dependent wet etching, and their electrical characteristics were systematically compared to the rectangular fin (Rec-Fin) ones by RIE. Thanks to the wide bottom area and the suppressed line edge roughness of Tri-Fins by the wet process, a higher threshold voltage (Vt) tunability and a smaller Vt variation were obtained as compared to the Rec-Fin ones. Moreover, the wet processed Tri-Fin devices provide a damage-free BOX layer, which is useful for the fabrication of multiple Vt devices with an ultrathin BOX layer.",

keywords = "Body effect factor, FinFET, SOTB, Threshold voltage (V), Triangular fin",

author = "Liu, {Y. X.} and T. Matsukawa and K. Endo and S. O'uchi and J. Tsukada and H. Yamauchi and Y. Ishikawa and W. Mizubayashi and Y. Morita and S. Migita and H. Ota and M. Masahara",

note = "Publisher Copyright: {\textcopyright} 2015 Published by Elsevier B.V.",

year = "2015",

month = nov,

day = "1",

doi = "10.1016/j.mee.2015.04.075",

language = "English",

volume = "147",

pages = "290--293",

journal = "Microelectronic Engineering",

issn = "0167-9317",

publisher = "Elsevier",

}

TY - JOUR

T1 - Highly Vt tunable and low variability triangular fin-channel MOSFETs on SOTB

AU - Liu, Y. X.

AU - Matsukawa, T.

AU - Endo, K.

AU - O'uchi, S.

AU - Tsukada, J.

AU - Yamauchi, H.

AU - Ishikawa, Y.

AU - Mizubayashi, W.

AU - Morita, Y.

AU - Migita, S.

AU - Ota, H.

AU - Masahara, M.

PY - 2015/11/1

Y1 - 2015/11/1

N2 - Abstract Triangular fin (Tri-Fin) channel double-gate (DG) MOSFETs were successfully fabricated on (1 0 0) SOTB wafers using orientation dependent wet etching, and their electrical characteristics were systematically compared to the rectangular fin (Rec-Fin) ones by RIE. Thanks to the wide bottom area and the suppressed line edge roughness of Tri-Fins by the wet process, a higher threshold voltage (Vt) tunability and a smaller Vt variation were obtained as compared to the Rec-Fin ones. Moreover, the wet processed Tri-Fin devices provide a damage-free BOX layer, which is useful for the fabrication of multiple Vt devices with an ultrathin BOX layer.

AB - Abstract Triangular fin (Tri-Fin) channel double-gate (DG) MOSFETs were successfully fabricated on (1 0 0) SOTB wafers using orientation dependent wet etching, and their electrical characteristics were systematically compared to the rectangular fin (Rec-Fin) ones by RIE. Thanks to the wide bottom area and the suppressed line edge roughness of Tri-Fins by the wet process, a higher threshold voltage (Vt) tunability and a smaller Vt variation were obtained as compared to the Rec-Fin ones. Moreover, the wet processed Tri-Fin devices provide a damage-free BOX layer, which is useful for the fabrication of multiple Vt devices with an ultrathin BOX layer.

KW - Body effect factor

KW - FinFET

KW - SOTB

KW - Threshold voltage (V)

KW - Triangular fin

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DO - 10.1016/j.mee.2015.04.075

M3 - Article

AN - SCOPUS:84929083934

SN - 0167-9317

VL - 147

SP - 290

EP - 293

JO - Microelectronic Engineering

JF - Microelectronic Engineering

M1 - 9898

ER -

Highly V_t tunable and low variability triangular fin-channel MOSFETs on SOTB

Abstract

Keywords

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