TY - JOUR
T1 - High‐Temperature Active Oxidation of Chemically Vapor‐Deposited Silicon Carbide in CO─CO2 Atmosphere
AU - Narushima, Takayuki
AU - Goto, Takashi
AU - Yokoyama, Yoshio
AU - Iguchi, Yasutaka
AU - Hirai, Toshio
PY - 1993/10
Y1 - 1993/10
N2 - Active oxidation behavior of CVD‐SiC in CO─CO2 atmospheres was investigated using a thermogravimetric technique in the temperature range between 1823 and 1923 K. The gas pressure ratio, PCO2/PCO, was controlled between 10−4 and 10−1 at 0.1 MPa. Active oxidation rates (mass loss rates) showed maxima at a certain value of PCO2/PCO, (PCO2/PCO)*, In a PCO2/PCO region lower than the (PCO2/PCO)* a carbon layer was formed on the SiC surface. In a PCO2/PCO region higher than the (PCO2/PCO)*, silica particles or a porous silica layer was observed on the SiC surface.
AB - Active oxidation behavior of CVD‐SiC in CO─CO2 atmospheres was investigated using a thermogravimetric technique in the temperature range between 1823 and 1923 K. The gas pressure ratio, PCO2/PCO, was controlled between 10−4 and 10−1 at 0.1 MPa. Active oxidation rates (mass loss rates) showed maxima at a certain value of PCO2/PCO, (PCO2/PCO)*, In a PCO2/PCO region lower than the (PCO2/PCO)* a carbon layer was formed on the SiC surface. In a PCO2/PCO region higher than the (PCO2/PCO)*, silica particles or a porous silica layer was observed on the SiC surface.
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U2 - 10.1111/j.1151-2916.1993.tb03975.x
DO - 10.1111/j.1151-2916.1993.tb03975.x
M3 - Article
AN - SCOPUS:0027677611
SN - 0002-7820
VL - 76
SP - 2521
EP - 2524
JO - Journal of the American Ceramic Society
JF - Journal of the American Ceramic Society
IS - 10
ER -