Active oxidation behavior of CVD‐SiC in CO─CO2 atmospheres was investigated using a thermogravimetric technique in the temperature range between 1823 and 1923 K. The gas pressure ratio, PCO2/PCO, was controlled between 10−4 and 10−1 at 0.1 MPa. Active oxidation rates (mass loss rates) showed maxima at a certain value of PCO2/PCO, (PCO2/PCO)*, In a PCO2/PCO region lower than the (PCO2/PCO)* a carbon layer was formed on the SiC surface. In a PCO2/PCO region higher than the (PCO2/PCO)*, silica particles or a porous silica layer was observed on the SiC surface.
|Number of pages||4|
|Journal||Journal of the American Ceramic Society|
|Publication status||Published - 1993 Oct|