High‐Temperature Passive Oxidation of Chemically Vapor Deposited Silicon Carbide

Takayuki Narushima; Takashi Goto; Toshio Hirai

doi:10.1111/j.1151-2916.1989.tb07658.x

High‐Temperature Passive Oxidation of Chemically Vapor Deposited Silicon Carbide

Takayuki Narushima, Takashi Goto, Toshio Hirai

ENG - Materials Processing

Tohoku University

Research output: Contribution to journal › Article › peer-review

175 Citations (Scopus)

Abstract

The oxidation behavior of chemically vapor deposited (CVD) SiC at high temperature was investigated using a thermogravimetric technique in the temperatures range of 1823 to 1948 K. The specimens were prepared by chemical vapor deposition using SiCl₄, C₃H₈, and H₂ as source gases. The oxidation behavior of the CVD‐SiC indicated “passive” oxidation and a two‐step parabolic oxidation kinetics over the entire temperature range. The crystallization of the SiO₂ film formed may have caused this two‐step parabolic behavior. The parabolic oxidation rate constant (K_p) varied with the square root of the oxygen partial pressure (P^1/2_O₂). The activation energy for the oxidation was determined to be 345 and 387 kJ · mol⁻¹. These values suggest that the diffusion process of the oxygen ion which passes through the SiO₂ film is rate‐controlling.

Original language	English
Pages (from-to)	1386-1390
Number of pages	5
Journal	Journal of the American Ceramic Society
Volume	72
Issue number	8
DOIs	https://doi.org/10.1111/j.1151-2916.1989.tb07658.x
Publication status	Published - 1989 Aug

Keywords

chemical vapor deposition
cristobalite
kinetics
oxidation
silicon carbide

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10.1111/j.1151-2916.1989.tb07658.x

Cite this

@article{3b707db1e38e4a0187cb203959b13fff,

title = "High‐Temperature Passive Oxidation of Chemically Vapor Deposited Silicon Carbide",

abstract = "The oxidation behavior of chemically vapor deposited (CVD) SiC at high temperature was investigated using a thermogravimetric technique in the temperatures range of 1823 to 1948 K. The specimens were prepared by chemical vapor deposition using SiCl4, C3H8, and H2 as source gases. The oxidation behavior of the CVD‐SiC indicated “passive” oxidation and a two‐step parabolic oxidation kinetics over the entire temperature range. The crystallization of the SiO2 film formed may have caused this two‐step parabolic behavior. The parabolic oxidation rate constant (Kp) varied with the square root of the oxygen partial pressure (P1/2O2). The activation energy for the oxidation was determined to be 345 and 387 kJ · mol−1. These values suggest that the diffusion process of the oxygen ion which passes through the SiO2 film is rate‐controlling.",

keywords = "chemical vapor deposition, cristobalite, kinetics, oxidation, silicon carbide",

author = "Takayuki Narushima and Takashi Goto and Toshio Hirai",

year = "1989",

month = aug,

doi = "10.1111/j.1151-2916.1989.tb07658.x",

language = "English",

volume = "72",

pages = "1386--1390",

journal = "Journal of the American Ceramic Society",

issn = "0002-7820",

publisher = "Wiley-Blackwell",

number = "8",

}

TY - JOUR

T1 - High‐Temperature Passive Oxidation of Chemically Vapor Deposited Silicon Carbide

AU - Narushima, Takayuki

AU - Goto, Takashi

AU - Hirai, Toshio

PY - 1989/8

Y1 - 1989/8

N2 - The oxidation behavior of chemically vapor deposited (CVD) SiC at high temperature was investigated using a thermogravimetric technique in the temperatures range of 1823 to 1948 K. The specimens were prepared by chemical vapor deposition using SiCl4, C3H8, and H2 as source gases. The oxidation behavior of the CVD‐SiC indicated “passive” oxidation and a two‐step parabolic oxidation kinetics over the entire temperature range. The crystallization of the SiO2 film formed may have caused this two‐step parabolic behavior. The parabolic oxidation rate constant (Kp) varied with the square root of the oxygen partial pressure (P1/2O2). The activation energy for the oxidation was determined to be 345 and 387 kJ · mol−1. These values suggest that the diffusion process of the oxygen ion which passes through the SiO2 film is rate‐controlling.

AB - The oxidation behavior of chemically vapor deposited (CVD) SiC at high temperature was investigated using a thermogravimetric technique in the temperatures range of 1823 to 1948 K. The specimens were prepared by chemical vapor deposition using SiCl4, C3H8, and H2 as source gases. The oxidation behavior of the CVD‐SiC indicated “passive” oxidation and a two‐step parabolic oxidation kinetics over the entire temperature range. The crystallization of the SiO2 film formed may have caused this two‐step parabolic behavior. The parabolic oxidation rate constant (Kp) varied with the square root of the oxygen partial pressure (P1/2O2). The activation energy for the oxidation was determined to be 345 and 387 kJ · mol−1. These values suggest that the diffusion process of the oxygen ion which passes through the SiO2 film is rate‐controlling.

KW - chemical vapor deposition

KW - cristobalite

KW - kinetics

KW - oxidation

KW - silicon carbide

UR - http://www.scopus.com/inward/record.url?scp=0024716359&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0024716359&partnerID=8YFLogxK

U2 - 10.1111/j.1151-2916.1989.tb07658.x

DO - 10.1111/j.1151-2916.1989.tb07658.x

M3 - Article

AN - SCOPUS:0024716359

SN - 0002-7820

VL - 72

SP - 1386

EP - 1390

JO - Journal of the American Ceramic Society

JF - Journal of the American Ceramic Society

IS - 8

ER -

High‐Temperature Passive Oxidation of Chemically Vapor Deposited Silicon Carbide

Abstract

Keywords

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