High‐Temperature Passive Oxidation of Chemically Vapor Deposited Silicon Carbide

Takayuki Narushima, Takashi Goto, Toshio Hirai

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175 Citations (Scopus)


The oxidation behavior of chemically vapor deposited (CVD) SiC at high temperature was investigated using a thermogravimetric technique in the temperatures range of 1823 to 1948 K. The specimens were prepared by chemical vapor deposition using SiCl4, C3H8, and H2 as source gases. The oxidation behavior of the CVD‐SiC indicated “passive” oxidation and a two‐step parabolic oxidation kinetics over the entire temperature range. The crystallization of the SiO2 film formed may have caused this two‐step parabolic behavior. The parabolic oxidation rate constant (Kp) varied with the square root of the oxygen partial pressure (P1/2O2). The activation energy for the oxidation was determined to be 345 and 387 kJ · mol−1. These values suggest that the diffusion process of the oxygen ion which passes through the SiO2 film is rate‐controlling.

Original languageEnglish
Pages (from-to)1386-1390
Number of pages5
JournalJournal of the American Ceramic Society
Issue number8
Publication statusPublished - 1989 Aug


  • chemical vapor deposition
  • cristobalite
  • kinetics
  • oxidation
  • silicon carbide


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