TY - JOUR
T1 - Hole-mediated ferromagnetism in a high-magnetic moment material, Gd-doped GaN
AU - Masago, Akira
AU - Shinya, Hikari
AU - Fukushima, Tetsuya
AU - Sato, Kazunori
AU - Katayama-Yoshida, Hiroshi
N1 - Publisher Copyright:
© 2020 IOP Publishing Ltd.
Copyright:
Copyright 2020 Elsevier B.V., All rights reserved.
PY - 2020/11/18
Y1 - 2020/11/18
N2 - As an exotic material in spintronics, Gd-doped GaN is known as a room temperature ferromagnetic material that possesses a large magnetic moment (4000 μ B per Gd ion). This paper theoretically proposes that the large magnetic moment and room temperature ferromagnetism observed in Gd-doped GaN is caused by N 2p holes based on the assumption that Ga-vacancies result from the introduction of Gd ions. This causes that the too large magnetic moment is estimated for Gd ions if only Gd ions contributed the magnetic moment.
AB - As an exotic material in spintronics, Gd-doped GaN is known as a room temperature ferromagnetic material that possesses a large magnetic moment (4000 μ B per Gd ion). This paper theoretically proposes that the large magnetic moment and room temperature ferromagnetism observed in Gd-doped GaN is caused by N 2p holes based on the assumption that Ga-vacancies result from the introduction of Gd ions. This causes that the too large magnetic moment is estimated for Gd ions if only Gd ions contributed the magnetic moment.
KW - Cation-vacancy-induced ferromagnetism
KW - Gadolinium-doped gallium nitride
KW - Room-temperature ferromagnetism
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U2 - 10.1088/1361-648X/abac8e
DO - 10.1088/1361-648X/abac8e
M3 - Article
AN - SCOPUS:85092313221
SN - 0953-8984
VL - 32
JO - Journal of Physics Condensed Matter
JF - Journal of Physics Condensed Matter
IS - 48
M1 - 485803
ER -