Hole-mediated ferromagnetism in a high-magnetic moment material, Gd-doped GaN

Akira Masago, Hikari Shinya, Tetsuya Fukushima, Kazunori Sato, Hiroshi Katayama-Yoshida

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1 Citation (Scopus)


As an exotic material in spintronics, Gd-doped GaN is known as a room temperature ferromagnetic material that possesses a large magnetic moment (4000 μ B per Gd ion). This paper theoretically proposes that the large magnetic moment and room temperature ferromagnetism observed in Gd-doped GaN is caused by N 2p holes based on the assumption that Ga-vacancies result from the introduction of Gd ions. This causes that the too large magnetic moment is estimated for Gd ions if only Gd ions contributed the magnetic moment.

Original languageEnglish
Article number485803
JournalJournal of Physics Condensed Matter
Issue number48
Publication statusPublished - 2020 Nov 18


  • Cation-vacancy-induced ferromagnetism
  • Gadolinium-doped gallium nitride
  • Room-temperature ferromagnetism

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics


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