Hole transport in p-type ZnO

Takayuki Makino, Atsushi Tsukazaki, Akira Ohtomo, Masashi Kawasaki, Hideomi Koinuma

Research output: Contribution to journalArticlepeer-review

19 Citations (Scopus)


A two-band model involving the A- and B-valence bands was adopted to analyze the temperature-dependent Hall effect measured on p-type ZnO. The hole transport characteristics (mobilities and effective Hall factor) are calculated using the "relaxation time approximation" as a function of temperature. It is shown that the lattice scattering by the acoustic deformation potential is predominant. In the calculation of the scattering rate for ionized impurity mechanism, an activation energy of 100 or 170 meV is used at different compensation ratios between donor and acceptor concentrations. The theoretical Hall mobility at an acceptor concentration of 7 × 10 18 cm3 is about 70 cm2 V-1 s -1 with the activation energy of 100 meV and the compensation ratio of 0.8 at 300 K. We also found that the compensation ratios conspicuously affected the Hall mobilities.

Original languageEnglish
Pages (from-to)6346-6351
Number of pages6
JournalJapanese Journal of Applied Physics
Issue number8 A
Publication statusPublished - 2006 Aug 4


  • Donor doping
  • Hole
  • Mobility
  • Nitrogen
  • Zinc oxide


Dive into the research topics of 'Hole transport in p-type ZnO'. Together they form a unique fingerprint.

Cite this