Hole transport in p-type ZnO

Takayuki Makino; Atsushi Tsukazaki; Akira Ohtomo; Masashi Kawasaki; Hideomi Koinuma

doi:10.1143/JJAP.45.6346

Hole transport in p-type ZnO

Takayuki Makino, Atsushi Tsukazaki, Akira Ohtomo, Masashi Kawasaki, Hideomi Koinuma

IMR - Materials Property Division

Research output: Contribution to journal › Article › peer-review

19 Citations (Scopus)

Abstract

A two-band model involving the A- and B-valence bands was adopted to analyze the temperature-dependent Hall effect measured on p-type ZnO. The hole transport characteristics (mobilities and effective Hall factor) are calculated using the "relaxation time approximation" as a function of temperature. It is shown that the lattice scattering by the acoustic deformation potential is predominant. In the calculation of the scattering rate for ionized impurity mechanism, an activation energy of 100 or 170 meV is used at different compensation ratios between donor and acceptor concentrations. The theoretical Hall mobility at an acceptor concentration of 7 × 10 ¹⁸ cm³ is about 70 cm² V^-1 s ^-1 with the activation energy of 100 meV and the compensation ratio of 0.8 at 300 K. We also found that the compensation ratios conspicuously affected the Hall mobilities.

Original language	English
Pages (from-to)	6346-6351
Number of pages	6
Journal	Japanese Journal of Applied Physics
Volume	45
Issue number	8 A
DOIs	https://doi.org/10.1143/JJAP.45.6346
Publication status	Published - 2006 Aug 4

Keywords

Donor doping
Hole
Mobility
Nitrogen
Zinc oxide

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T1 - Hole transport in p-type ZnO

AU - Makino, Takayuki

AU - Tsukazaki, Atsushi

AU - Ohtomo, Akira

AU - Kawasaki, Masashi

AU - Koinuma, Hideomi

PY - 2006/8/4

Y1 - 2006/8/4

N2 - A two-band model involving the A- and B-valence bands was adopted to analyze the temperature-dependent Hall effect measured on p-type ZnO. The hole transport characteristics (mobilities and effective Hall factor) are calculated using the "relaxation time approximation" as a function of temperature. It is shown that the lattice scattering by the acoustic deformation potential is predominant. In the calculation of the scattering rate for ionized impurity mechanism, an activation energy of 100 or 170 meV is used at different compensation ratios between donor and acceptor concentrations. The theoretical Hall mobility at an acceptor concentration of 7 × 10 18 cm3 is about 70 cm2 V-1 s -1 with the activation energy of 100 meV and the compensation ratio of 0.8 at 300 K. We also found that the compensation ratios conspicuously affected the Hall mobilities.

AB - A two-band model involving the A- and B-valence bands was adopted to analyze the temperature-dependent Hall effect measured on p-type ZnO. The hole transport characteristics (mobilities and effective Hall factor) are calculated using the "relaxation time approximation" as a function of temperature. It is shown that the lattice scattering by the acoustic deformation potential is predominant. In the calculation of the scattering rate for ionized impurity mechanism, an activation energy of 100 or 170 meV is used at different compensation ratios between donor and acceptor concentrations. The theoretical Hall mobility at an acceptor concentration of 7 × 10 18 cm3 is about 70 cm2 V-1 s -1 with the activation energy of 100 meV and the compensation ratio of 0.8 at 300 K. We also found that the compensation ratios conspicuously affected the Hall mobilities.

KW - Donor doping

KW - Hole

KW - Mobility

KW - Nitrogen

KW - Zinc oxide

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Hole transport in p-type ZnO

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Keywords

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