Hole tunneling properties in resonant tunneling diodes with Si/strained Si0.8Ge0.2 heterostructures grown on Si(100) by low-temperature ultraclean LPCVD

Ryota Ito, Masao Sakuraba, Junichi Murota

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Original languageEnglish
Title of host publicationThird International SiGe Technology and Device Meeting, ISTDM 2006 - Conference Digest
Publication statusPublished - 2006
EventThird International SiGe Technology and Device Meeting, ISTDM 2006 - Princeton, NJ, United States
Duration: 2006 May 152006 May 17

Publication series

NameThird International SiGe Technology and Device Meeting, ISTDM 2006 - Conference Digest
Volume2006

Conference

ConferenceThird International SiGe Technology and Device Meeting, ISTDM 2006
Country/TerritoryUnited States
CityPrinceton, NJ
Period06/5/1506/5/17

Cite this