Homoepitaxial growth of AlN on nitrided sapphire by LPE method using Ga-Al binary solution

Masayoshi Adachi, Kazuo Maeda, Akikazu Tanaka, Hidekazu Kobatake, Hiroyuki Fukuyama

Research output: Contribution to journalArticlepeer-review

23 Citations (Scopus)


A novel liquid phase epitaxy method was proposed for growing an AlN layer using Ga-Al binary flux under normal pressure. In this method, nitrogen gas was injected into the flux. Then a nitrided sapphire substrate was used as a template to achieve homoepitaxial growth. Advantages of using a nitrided sapphire substrate were demonstrated; the optimum flux composition was investigated. We grew 1-μm-thick c-axis oriented AlN layer for 5 h at 1573 K. The full width at half maximum values of X-ray rocking curves for AlN (0002) and (10-12) were, respectively, 50 and 590 arcsec. Moreover, the surface morphology and interfacial structure were observed using a scanning electron microscope, laser microscope, and high-resolution transmission electron microscope.

Original languageEnglish
Pages (from-to)1494-1497
Number of pages4
JournalPhysica Status Solidi (A) Applications and Materials Science
Issue number7
Publication statusPublished - 2011 Jul


  • AlN
  • Ga-Al binary solution
  • liquid phase epitaxy
  • nitrogen gas bubbling
  • sapphire nitridation


Dive into the research topics of 'Homoepitaxial growth of AlN on nitrided sapphire by LPE method using Ga-Al binary solution'. Together they form a unique fingerprint.

Cite this