A novel liquid phase epitaxy method was proposed for growing an AlN layer using Ga-Al binary flux under normal pressure. In this method, nitrogen gas was injected into the flux. Then a nitrided sapphire substrate was used as a template to achieve homoepitaxial growth. Advantages of using a nitrided sapphire substrate were demonstrated; the optimum flux composition was investigated. We grew 1-μm-thick c-axis oriented AlN layer for 5 h at 1573 K. The full width at half maximum values of X-ray rocking curves for AlN (0002) and (10-12) were, respectively, 50 and 590 arcsec. Moreover, the surface morphology and interfacial structure were observed using a scanning electron microscope, laser microscope, and high-resolution transmission electron microscope.
|Number of pages||4|
|Journal||Physica Status Solidi (A) Applications and Materials Science|
|Publication status||Published - 2011 Jul|
- Ga-Al binary solution
- liquid phase epitaxy
- nitrogen gas bubbling
- sapphire nitridation