Abstract
The degradation in MOS device characteristics as well as in their hot-electron injection immunity caused by ion-bombardment processes has been investigated. It has been found that neutral electron traps were generated due to the charging-up of the gate electrode during ion implantation. These neutral traps contribute to enhanced positive threshold shifts in the following hot-electron injection experiment. It has been demonstrated that such problems can be eliminated by grounding the gate electrode during ion implantation. Similar effects were also observed for a low-energy bias sputtering deposition process.
| Original language | English |
|---|---|
| Pages (from-to) | 2389-2391 |
| Number of pages | 3 |
| Journal | Japanese journal of applied physics |
| Volume | 29 |
| Issue number | 12 |
| DOIs | |
| Publication status | Published - 1990 Dec |
| Externally published | Yes |
Keywords
- Charge-up
- Hot carrier
- Hot-carrier immunity
- Hot-electron injection
- Ion implantation
- Ion-bombardment process
- Low-energy bias sputtering
- Mos
- Neutral traps
ASJC Scopus subject areas
- Engineering(all)
- Physics and Astronomy(all)