Hot carrier reliability of a SiGe/Si hetero-interface in SiGe MOSFETs

Toshiaki Tsuchiya; Masao Sakuraba; Junichi Murota

doi:10.1109/RELPHY.2004.1315370

Hot carrier reliability of a SiGe/Si hetero-interface in SiGe MOSFETs

Toshiaki Tsuchiya, Masao Sakuraba, Junichi Murota

Information Devices Division

Research output: Contribution to journal › Conference article › peer-review

5 Citations (Scopus)

Abstract

In this paper we report for the first time a mechanism whereby hetero-interface traps are generated by hot carriers in a SiGe/Si heterostructure. The trap density is estimated for SiGe-channel MOSFETs using a newly established elaborate low-temperature charge pumping technique. These results will enable a new level of improvements to the performance and reliability of strained-Si and SiGe devices.

Original language	English
Article number	1315370
Pages (from-to)	449-454
Number of pages	6
Journal	IEEE International Reliability Physics Symposium Proceedings
Volume	2004-January
Issue number	January
DOIs	https://doi.org/10.1109/RELPHY.2004.1315370
Publication status	Published - 2004
Event	42nd Annual IEEE International Reliability Physics Symposium, IRPS 2004 - Phoenix, United States Duration: 2004 Apr 25 → 2004 Apr 29

ASJC Scopus subject areas

Engineering(all)

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10.1109/RELPHY.2004.1315370

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title = "Hot carrier reliability of a SiGe/Si hetero-interface in SiGe MOSFETs",

abstract = "In this paper we report for the first time a mechanism whereby hetero-interface traps are generated by hot carriers in a SiGe/Si heterostructure. The trap density is estimated for SiGe-channel MOSFETs using a newly established elaborate low-temperature charge pumping technique. These results will enable a new level of improvements to the performance and reliability of strained-Si and SiGe devices.",

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AU - Tsuchiya, Toshiaki

AU - Sakuraba, Masao

AU - Murota, Junichi

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N2 - In this paper we report for the first time a mechanism whereby hetero-interface traps are generated by hot carriers in a SiGe/Si heterostructure. The trap density is estimated for SiGe-channel MOSFETs using a newly established elaborate low-temperature charge pumping technique. These results will enable a new level of improvements to the performance and reliability of strained-Si and SiGe devices.

AB - In this paper we report for the first time a mechanism whereby hetero-interface traps are generated by hot carriers in a SiGe/Si heterostructure. The trap density is estimated for SiGe-channel MOSFETs using a newly established elaborate low-temperature charge pumping technique. These results will enable a new level of improvements to the performance and reliability of strained-Si and SiGe devices.

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M3 - Conference article

AN - SCOPUS:84932139683

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SP - 449

EP - 454

JO - IEEE International Reliability Physics Symposium Proceedings

JF - IEEE International Reliability Physics Symposium Proceedings

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ER -

Hot carrier reliability of a SiGe/Si hetero-interface in SiGe MOSFETs

Abstract

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