Hot carrier reliability of a SiGe/Si hetero-interface in SiGe MOSFETs

Toshiaki Tsuchiya, Masao Sakuraba, Junichi Murota

Research output: Contribution to journalConference articlepeer-review

1 Citation (Scopus)


In this paper we report for the first time a mechanism whereby hetero-interface traps are generated by hot carriers in a SiGe/Si heterostructure. The trap density is estimated for SiGe-channel MOSFETs using a newly established elaborate low-temperature charge pumping technique. These results will enable a new level of improvements to the performance and reliability of strained-Si and SiGe devices.

Original languageEnglish
Pages (from-to)449-454
Number of pages6
JournalAnnual Proceedings - Reliability Physics (Symposium)
Publication statusPublished - 2004
Event2004 IEEE International Reliability Physics Symposium Proceedings, 42nd Annual - Phoenix, AZ., United States
Duration: 2004 Apr 252004 Apr 29


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