In this paper we report for the first time a mechanism whereby hetero-interface traps are generated by hot carriers in a SiGe/Si heterostructure. The trap density is estimated for SiGe-channel MOSFETs using a newly established elaborate low-temperature charge pumping technique. These results will enable a new level of improvements to the performance and reliability of strained-Si and SiGe devices.
|Number of pages||6|
|Journal||Annual Proceedings - Reliability Physics (Symposium)|
|Publication status||Published - 2004|
|Event||2004 IEEE International Reliability Physics Symposium Proceedings, 42nd Annual - Phoenix, AZ., United States|
Duration: 2004 Apr 25 → 2004 Apr 29