Abstract
In this paper we report for the first time a mechanism whereby hetero-interface traps are generated by hot carriers in a SiGe/Si heterostructure. The trap density is estimated for SiGe-channel MOSFETs using a newly established elaborate low-temperature charge pumping technique. These results will enable a new level of improvements to the performance and reliability of strained-Si and SiGe devices.
| Original language | English |
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| Pages (from-to) | 449-454 |
| Number of pages | 6 |
| Journal | Annual Proceedings - Reliability Physics (Symposium) |
| Publication status | Published - 2004 |
| Event | 2004 IEEE International Reliability Physics Symposium Proceedings, 42nd Annual - Phoenix, AZ., United States Duration: 2004 Apr 25 → 2004 Apr 29 |