Hybrid isolation process with deep diffusion and V-groove for reverse blocking IGBTs

Haruo Nakazawa; Masaaki Ogino; Hiroki Wakimoto; Tsunehiro Nakajima; Yoshikazu Takahashi; David Hongfei Lu

doi:10.1109/ISPSD.2011.5890804

Hybrid isolation process with deep diffusion and V-groove for reverse blocking IGBTs

Haruo Nakazawa, Masaaki Ogino, Hiroki Wakimoto, Tsunehiro Nakajima, Yoshikazu Takahashi, David Hongfei Lu

Center for Innovative Integrated Electronic Systems (CIES)

Fuji Electric Co., Ltd.

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

20 Citations (Scopus)

Abstract

We newly developed a 1200V Reverse Blocking (RB)-IGBT used to form bi-directional switches in advanced Neutral-Point-Clamped (A-NPC) 3-Level modules. It featured a hybrid through-silicon isolation structure combining wafer front-side boron deep diffusion with back-side V-groove etching. Collector layer was implanted into the back-side and the surface of the V-grooves, and electrically connected to the front-side boron diffusion after activation to achieve reverse-blocking capability. Thermal budget for the surface deep boron diffusion was thereby shortened more than a half of that in full diffusion case to improve both throughput and yield. Sufficient reverse blocking capability was experimentally verified.

Original language	English
Title of host publication	ISPSD 2011 - Proceedings of the 23rd International Symposium on Power Semiconductor Devices and ICs
Pages	116-119
Number of pages	4
DOIs	https://doi.org/10.1109/ISPSD.2011.5890804
Publication status	Published - 2011
Event	23rd International Symposium on Power Semiconductor Devices and ICs, ISPSD 2011 - San Diego, CA, United States Duration: 2011 May 23 → 2011 May 26

Publication series

Name	Proceedings of the International Symposium on Power Semiconductor Devices and ICs
ISSN (Print)	1063-6854

Conference

Conference	23rd International Symposium on Power Semiconductor Devices and ICs, ISPSD 2011
Country/Territory	United States
City	San Diego, CA
Period	11/5/23 → 11/5/26

Access to Document

10.1109/ISPSD.2011.5890804

Cite this

Nakazawa, H., Ogino, M., Wakimoto, H., Nakajima, T., Takahashi, Y., & Lu, D. H. (2011). Hybrid isolation process with deep diffusion and V-groove for reverse blocking IGBTs. In ISPSD 2011 - Proceedings of the 23rd International Symposium on Power Semiconductor Devices and ICs (pp. 116-119). Article 5890804 (Proceedings of the International Symposium on Power Semiconductor Devices and ICs). https://doi.org/10.1109/ISPSD.2011.5890804

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title = "Hybrid isolation process with deep diffusion and V-groove for reverse blocking IGBTs",

abstract = "We newly developed a 1200V Reverse Blocking (RB)-IGBT used to form bi-directional switches in advanced Neutral-Point-Clamped (A-NPC) 3-Level modules. It featured a hybrid through-silicon isolation structure combining wafer front-side boron deep diffusion with back-side V-groove etching. Collector layer was implanted into the back-side and the surface of the V-grooves, and electrically connected to the front-side boron diffusion after activation to achieve reverse-blocking capability. Thermal budget for the surface deep boron diffusion was thereby shortened more than a half of that in full diffusion case to improve both throughput and yield. Sufficient reverse blocking capability was experimentally verified.",

author = "Haruo Nakazawa and Masaaki Ogino and Hiroki Wakimoto and Tsunehiro Nakajima and Yoshikazu Takahashi and Lu, {David Hongfei}",

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isbn = "9781424484225",

series = "Proceedings of the International Symposium on Power Semiconductor Devices and ICs",

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booktitle = "ISPSD 2011 - Proceedings of the 23rd International Symposium on Power Semiconductor Devices and ICs",

note = "23rd International Symposium on Power Semiconductor Devices and ICs, ISPSD 2011 ; Conference date: 23-05-2011 Through 26-05-2011",

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Nakazawa, H, Ogino, M, Wakimoto, H, Nakajima, T, Takahashi, Y & Lu, DH 2011, Hybrid isolation process with deep diffusion and V-groove for reverse blocking IGBTs. in ISPSD 2011 - Proceedings of the 23rd International Symposium on Power Semiconductor Devices and ICs., 5890804, Proceedings of the International Symposium on Power Semiconductor Devices and ICs, pp. 116-119, 23rd International Symposium on Power Semiconductor Devices and ICs, ISPSD 2011, San Diego, CA, United States, 11/5/23. https://doi.org/10.1109/ISPSD.2011.5890804

Hybrid isolation process with deep diffusion and V-groove for reverse blocking IGBTs. / Nakazawa, Haruo; Ogino, Masaaki; Wakimoto, Hiroki et al.
ISPSD 2011 - Proceedings of the 23rd International Symposium on Power Semiconductor Devices and ICs. 2011. p. 116-119 5890804 (Proceedings of the International Symposium on Power Semiconductor Devices and ICs).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

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AB - We newly developed a 1200V Reverse Blocking (RB)-IGBT used to form bi-directional switches in advanced Neutral-Point-Clamped (A-NPC) 3-Level modules. It featured a hybrid through-silicon isolation structure combining wafer front-side boron deep diffusion with back-side V-groove etching. Collector layer was implanted into the back-side and the surface of the V-grooves, and electrically connected to the front-side boron diffusion after activation to achieve reverse-blocking capability. Thermal budget for the surface deep boron diffusion was thereby shortened more than a half of that in full diffusion case to improve both throughput and yield. Sufficient reverse blocking capability was experimentally verified.

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Nakazawa H, Ogino M, Wakimoto H, Nakajima T, Takahashi Y, Lu DH. Hybrid isolation process with deep diffusion and V-groove for reverse blocking IGBTs. In ISPSD 2011 - Proceedings of the 23rd International Symposium on Power Semiconductor Devices and ICs. 2011. p. 116-119. 5890804. (Proceedings of the International Symposium on Power Semiconductor Devices and ICs). doi: 10.1109/ISPSD.2011.5890804

Hybrid isolation process with deep diffusion and V-groove for reverse blocking IGBTs

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