Hybrid LPE/MBE-grown InGaAsP/InP DFB lasers

H. Asahi, Y. Kawamura, Y. Noguchi, T. Matsuoka, H. Nagai

Research output: Contribution to journalArticlepeer-review

6 Citations (Scopus)


InGaAsP InP distributed-feedback (DFB) lasers operating at 1.5 μm have been successfully fabricated by a hybrid growth technique of liquid phase epitaxy (LPE) and molecular beam epitaxy (MBE). A threshold current of 180 mA at 23°C and single-longitudinal-mode operation have been obtained.

Original languageEnglish
Pages (from-to)507-509
Number of pages3
JournalElectronics Letters
Issue number14
Publication statusPublished - 1983 Jul 7
Externally publishedYes

ASJC Scopus subject areas

  • Electrical and Electronic Engineering


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