Hybrid LPE/MBE-grown InGaAsP/InP DFB lasers

H. Asahi; Y. Kawamura; Y. Noguchi; T. Matsuoka; H. Nagai

doi:10.1049/el:19830345

Hybrid LPE/MBE-grown InGaAsP/InP DFB lasers

H. Asahi, Y. Kawamura, Y. Noguchi, T. Matsuoka, H. Nagai

Research output: Contribution to journal › Article › peer-review

6 Citations (Scopus)

Abstract

InGaAsP InP distributed-feedback (DFB) lasers operating at 1.5 μm have been successfully fabricated by a hybrid growth technique of liquid phase epitaxy (LPE) and molecular beam epitaxy (MBE). A threshold current of 180 mA at 23°C and single-longitudinal-mode operation have been obtained.

Original language	English
Pages (from-to)	507-509
Number of pages	3
Journal	Electronics Letters
Volume	19
Issue number	14
DOIs	https://doi.org/10.1049/el:19830345
Publication status	Published - 1983 Jul 7
Externally published	Yes

ASJC Scopus subject areas

Electrical and Electronic Engineering

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10.1049/el:19830345

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title = "Hybrid LPE/MBE-grown InGaAsP/InP DFB lasers",

abstract = "InGaAsP InP distributed-feedback (DFB) lasers operating at 1.5 μm have been successfully fabricated by a hybrid growth technique of liquid phase epitaxy (LPE) and molecular beam epitaxy (MBE). A threshold current of 180 mA at 23°C and single-longitudinal-mode operation have been obtained.",

author = "H. Asahi and Y. Kawamura and Y. Noguchi and T. Matsuoka and H. Nagai",

year = "1983",

month = jul,

day = "7",

doi = "10.1049/el:19830345",

language = "English",

volume = "19",

pages = "507--509",

journal = "Electronics Letters",

issn = "0013-5194",

publisher = "Institution of Engineering and Technology",

number = "14",

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TY - JOUR

T1 - Hybrid LPE/MBE-grown InGaAsP/InP DFB lasers

AU - Asahi, H.

AU - Kawamura, Y.

AU - Noguchi, Y.

AU - Matsuoka, T.

AU - Nagai, H.

PY - 1983/7/7

Y1 - 1983/7/7

N2 - InGaAsP InP distributed-feedback (DFB) lasers operating at 1.5 μm have been successfully fabricated by a hybrid growth technique of liquid phase epitaxy (LPE) and molecular beam epitaxy (MBE). A threshold current of 180 mA at 23°C and single-longitudinal-mode operation have been obtained.

AB - InGaAsP InP distributed-feedback (DFB) lasers operating at 1.5 μm have been successfully fabricated by a hybrid growth technique of liquid phase epitaxy (LPE) and molecular beam epitaxy (MBE). A threshold current of 180 mA at 23°C and single-longitudinal-mode operation have been obtained.

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U2 - 10.1049/el:19830345

DO - 10.1049/el:19830345

M3 - Article

AN - SCOPUS:0021096874

SN - 0013-5194

VL - 19

SP - 507

EP - 509

JO - Electronics Letters

JF - Electronics Letters

IS - 14

ER -

Hybrid LPE/MBE-grown InGaAsP/InP DFB lasers

Abstract

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