TY - JOUR
T1 - Hybrid orbital energy for heterojunction band lineup
AU - Hasegawa, Hideki
AU - Ohno, Hideo
AU - Sawada, Takayuki
PY - 1986/4
Y1 - 1986/4
N2 - It is shown that the alignment of the hybrid orbital energy, EHO is required at the heterojunction interfaces. The locations of Eho are tabulated for AlAs, GaP, GaAs, InP and InAs. The matching of EHO reproduces remarkably well the valence band discontinuity observed experimentally. An interpretation based on a simple thermodynamic consideration is given to explain why matching of EHO is required at the heterojunction interface, which involves inevitable formation of interface dipole as opposed to Tersoff’s quantum dipole theory.
AB - It is shown that the alignment of the hybrid orbital energy, EHO is required at the heterojunction interfaces. The locations of Eho are tabulated for AlAs, GaP, GaAs, InP and InAs. The matching of EHO reproduces remarkably well the valence band discontinuity observed experimentally. An interpretation based on a simple thermodynamic consideration is given to explain why matching of EHO is required at the heterojunction interface, which involves inevitable formation of interface dipole as opposed to Tersoff’s quantum dipole theory.
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U2 - 10.1143/JJAP.25.L265
DO - 10.1143/JJAP.25.L265
M3 - Article
AN - SCOPUS:0022704288
SN - 0021-4922
VL - 25
SP - L265-L268
JO - Japanese Journal of Applied Physics
JF - Japanese Journal of Applied Physics
IS - 4 A
ER -