Hybridization of Cr 3d-N 2p-Ga 4s in the wide band-gap diluted magnetic semiconductor Ga1-xCrxN [20]

J. J. Kim; H. Makino; K. Kobayashi; Y. Takata; T. Yamamoto; T. Hanada; M. W. Cho; E. Ikenaga; M. Yabashi; D. Miwa; Y. Nishino; K. Tamasaku; T. Ishikawa; S. Shin; T. Yao

doi:10.1103/PhysRevB.70.161315

Hybridization of Cr 3d-N 2p-Ga 4s in the wide band-gap diluted magnetic semiconductor Ga_1-xCr_xN [20]

J. J. Kim, H. Makino, K. Kobayashi, Y. Takata, T. Yamamoto, T. Hanada, M. W. Cho, E. Ikenaga, M. Yabashi, D. Miwa, Y. Nishino, K. Tamasaku, T. Ishikawa, S. Shin, T. Yao

IMR - Materials Design Division

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23 Citations (Scopus)

Abstract

We observed that Cr doping introduces an electronic state in the band gap in Ga_1-xCr_xN by using hard x-ray photoemission spectroscopy. Based on first-principles calculations, the electronic state is interpreted to be dominantly Ga 4s originated states. The chemical effect of Cr up to the second-nearest-neighbor Ga atoms has also been observed in the core-level spectra of Ga 2p_3/2. The present results evidence that the Ga valence electrons are strongly affected by the second-nearest-neighbor Cr atoms through Cr 3d-Ga 4s hybridization.

Original language	English
Article number	161315
Pages (from-to)	1-4
Number of pages	4
Journal	Physical Review B - Condensed Matter and Materials Physics
Volume	70
Issue number	16
DOIs	https://doi.org/10.1103/PhysRevB.70.161315
Publication status	Published - 2004 Oct

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Kim, J. J., Makino, H., Kobayashi, K., Takata, Y., Yamamoto, T., Hanada, T., Cho, M. W., Ikenaga, E., Yabashi, M., Miwa, D., Nishino, Y., Tamasaku, K., Ishikawa, T., Shin, S., & Yao, T. (2004). Hybridization of Cr 3d-N 2p-Ga 4s in the wide band-gap diluted magnetic semiconductor Ga_1-xCr_xN [20]. Physical Review B - Condensed Matter and Materials Physics, 70(16), 1-4. Article 161315. https://doi.org/10.1103/PhysRevB.70.161315

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title = "Hybridization of Cr 3d-N 2p-Ga 4s in the wide band-gap diluted magnetic semiconductor Ga1-xCrxN [20]",

abstract = "We observed that Cr doping introduces an electronic state in the band gap in Ga1-xCrxN by using hard x-ray photoemission spectroscopy. Based on first-principles calculations, the electronic state is interpreted to be dominantly Ga 4s originated states. The chemical effect of Cr up to the second-nearest-neighbor Ga atoms has also been observed in the core-level spectra of Ga 2p3/2. The present results evidence that the Ga valence electrons are strongly affected by the second-nearest-neighbor Cr atoms through Cr 3d-Ga 4s hybridization.",

author = "Kim, {J. J.} and H. Makino and K. Kobayashi and Y. Takata and T. Yamamoto and T. Hanada and Cho, {M. W.} and E. Ikenaga and M. Yabashi and D. Miwa and Y. Nishino and K. Tamasaku and T. Ishikawa and S. Shin and T. Yao",

year = "2004",

month = oct,

doi = "10.1103/PhysRevB.70.161315",

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Kim, JJ, Makino, H, Kobayashi, K, Takata, Y, Yamamoto, T, Hanada, T, Cho, MW, Ikenaga, E, Yabashi, M, Miwa, D, Nishino, Y, Tamasaku, K, Ishikawa, T, Shin, S & Yao, T 2004, 'Hybridization of Cr 3d-N 2p-Ga 4s in the wide band-gap diluted magnetic semiconductor Ga_1-xCr_xN [20]', Physical Review B - Condensed Matter and Materials Physics, vol. 70, no. 16, 161315, pp. 1-4. https://doi.org/10.1103/PhysRevB.70.161315

TY - JOUR

T1 - Hybridization of Cr 3d-N 2p-Ga 4s in the wide band-gap diluted magnetic semiconductor Ga1-xCrxN [20]

AU - Kim, J. J.

AU - Makino, H.

AU - Kobayashi, K.

AU - Takata, Y.

AU - Yamamoto, T.

AU - Hanada, T.

AU - Cho, M. W.

AU - Ikenaga, E.

AU - Yabashi, M.

AU - Miwa, D.

AU - Nishino, Y.

AU - Tamasaku, K.

AU - Ishikawa, T.

AU - Shin, S.

AU - Yao, T.

PY - 2004/10

Y1 - 2004/10

N2 - We observed that Cr doping introduces an electronic state in the band gap in Ga1-xCrxN by using hard x-ray photoemission spectroscopy. Based on first-principles calculations, the electronic state is interpreted to be dominantly Ga 4s originated states. The chemical effect of Cr up to the second-nearest-neighbor Ga atoms has also been observed in the core-level spectra of Ga 2p3/2. The present results evidence that the Ga valence electrons are strongly affected by the second-nearest-neighbor Cr atoms through Cr 3d-Ga 4s hybridization.

AB - We observed that Cr doping introduces an electronic state in the band gap in Ga1-xCrxN by using hard x-ray photoemission spectroscopy. Based on first-principles calculations, the electronic state is interpreted to be dominantly Ga 4s originated states. The chemical effect of Cr up to the second-nearest-neighbor Ga atoms has also been observed in the core-level spectra of Ga 2p3/2. The present results evidence that the Ga valence electrons are strongly affected by the second-nearest-neighbor Cr atoms through Cr 3d-Ga 4s hybridization.

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ER -

Hybridization of Cr 3d-N 2p-Ga 4s in the wide band-gap diluted magnetic semiconductor Ga_1-xCr_xN [20]

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