Hydrogen-controlled crystallinity of 3C-SiC film on Si(001) grown with monomethylsilane

Yuzuru Narita, Atsushi Konno, Hideki Nakazawa, Takashi Itoh, Kanji Yasui, Tetsuo Endoh, Maki Suemitsu

Research output: Contribution to journalArticlepeer-review

12 Citations (Scopus)


Heteroepitaxial growth of 3C-SiC has been conducted on Si(001) substrate using monomethylsilane as a single source gas. By evaluating the crystalliniy of the film as a function of the growth temperature T and pressure P, a process window for a good epitaxy has been obtained, which is expressed as P c1(T) < P < Pc2(T). Both of the two critical pressures increase with T, and are both successfully expressed with a single analytical function derived from the hydrogen adsorption/desorption balance on the surface.

Original languageEnglish
Pages (from-to)L40-L42
JournalJapanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
Issue number1-3
Publication statusPublished - 2007 Jan 12


  • Hydrogen adsorption/desorption
  • Monomethylsilane
  • Phase diagram
  • Si(001)
  • Silicom carbide


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