Hydrogen sensitivity of InP HEMTs with WSiN-based gate stack

S. D. Mertens; J. A. Del Alamo; T. Suemitsu; T. Enoki

doi:10.1109/ICIPRM.2002.1014397

Hydrogen sensitivity of InP HEMTs with WSiN-based gate stack

S. D. Mertens, J. A. Del Alamo, T. Suemitsu, T. Enoki

Research output: Contribution to journal › Article › peer-review

1 Citation (Scopus)

Abstract

We have investigated the hydrogen sensitivity of InP HEMTs with a WSiN/Ti/Pt/Au gate stack. We have found that the impact of hydrogen on the threshold voltage of these devices is one order of magnitude smaller than conventional Ti/Pt/Au-gate HEMTs. This markedly improved reliability has been studied through a set of quasi-2D mechanical and electrostatic simulations. These showed that there are two main causes for the improvement of the H-sensitivity. First, the separation of the Ti-layer from the semiconductor by a thick WSiN layer significantly reduces the stress in the active layer. Additionally, the thinner heterostructure and the presence of an InP etch-stop layer with a small piezoelectric constant underneath the gate reduces the amount of threshold voltage shift that is caused by the mechanical stress.

Original language	English
Pages (from-to)	323-326
Number of pages	4
Journal	Conference Proceedings-International Conference on Indium Phosphide and Related Materials
DOIs	https://doi.org/10.1109/ICIPRM.2002.1014397
Publication status	Published - 2002
Externally published	Yes

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering

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title = "Hydrogen sensitivity of InP HEMTs with WSiN-based gate stack",

abstract = "We have investigated the hydrogen sensitivity of InP HEMTs with a WSiN/Ti/Pt/Au gate stack. We have found that the impact of hydrogen on the threshold voltage of these devices is one order of magnitude smaller than conventional Ti/Pt/Au-gate HEMTs. This markedly improved reliability has been studied through a set of quasi-2D mechanical and electrostatic simulations. These showed that there are two main causes for the improvement of the H-sensitivity. First, the separation of the Ti-layer from the semiconductor by a thick WSiN layer significantly reduces the stress in the active layer. Additionally, the thinner heterostructure and the presence of an InP etch-stop layer with a small piezoelectric constant underneath the gate reduces the amount of threshold voltage shift that is caused by the mechanical stress.",

author = "Mertens, {S. D.} and {Del Alamo}, {J. A.} and T. Suemitsu and T. Enoki",

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journal = "Conference Proceedings - International Conference on Indium Phosphide and Related Materials",

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T1 - Hydrogen sensitivity of InP HEMTs with WSiN-based gate stack

AU - Mertens, S. D.

AU - Del Alamo, J. A.

AU - Suemitsu, T.

AU - Enoki, T.

PY - 2002

Y1 - 2002

N2 - We have investigated the hydrogen sensitivity of InP HEMTs with a WSiN/Ti/Pt/Au gate stack. We have found that the impact of hydrogen on the threshold voltage of these devices is one order of magnitude smaller than conventional Ti/Pt/Au-gate HEMTs. This markedly improved reliability has been studied through a set of quasi-2D mechanical and electrostatic simulations. These showed that there are two main causes for the improvement of the H-sensitivity. First, the separation of the Ti-layer from the semiconductor by a thick WSiN layer significantly reduces the stress in the active layer. Additionally, the thinner heterostructure and the presence of an InP etch-stop layer with a small piezoelectric constant underneath the gate reduces the amount of threshold voltage shift that is caused by the mechanical stress.

AB - We have investigated the hydrogen sensitivity of InP HEMTs with a WSiN/Ti/Pt/Au gate stack. We have found that the impact of hydrogen on the threshold voltage of these devices is one order of magnitude smaller than conventional Ti/Pt/Au-gate HEMTs. This markedly improved reliability has been studied through a set of quasi-2D mechanical and electrostatic simulations. These showed that there are two main causes for the improvement of the H-sensitivity. First, the separation of the Ti-layer from the semiconductor by a thick WSiN layer significantly reduces the stress in the active layer. Additionally, the thinner heterostructure and the presence of an InP etch-stop layer with a small piezoelectric constant underneath the gate reduces the amount of threshold voltage shift that is caused by the mechanical stress.

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Hydrogen sensitivity of InP HEMTs with WSiN-based gate stack

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