Hydrogen termination of the NH4F treated Si(111) surface studied by photoemission and surface infrared spectroscopy

Michio Niwano; Kazunari Kurita; Nobuo Miyamoto

Hydrogen termination of the NH₄F treated Si(111) surface studied by photoemission and surface infrared spectroscopy

Michio Niwano, Kazunari Kurita, Nobuo Miyamoto

Human Information Systems Division

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

The Si(111) surface treated in NH₄F has been investigated using photoemission and surface infrared spectroscopy (SIS). We confirm both with photoemission and SIS measurements that the NH₄F-treated Si(111) surface is dominantly terminated with the monohydride Si (Si-H) oriented perpendicular to the surface and is free from silicon oxide. Photoemission and SIS data also demonstrate that ammonium fluorides react with the Si substrate to generate the hexafluorosilicate salt, (NH₄)₂SiF₆. We propose that the formation of (NH₄)₂SiF₆ or SiF₆^2- ions plays an important role in the NH₄F etching of Si crystals.

Original language	English
Title of host publication	Surface Chemical Cleaning and Passivation for Semiconductor Processing
Editors	Gregg S. Higashi, Eugene A. Irene, Tadahiro Ohmi
Publisher	Publ by Materials Research Society
Pages	505-510
Number of pages	6
ISBN (Print)	1558992138
Publication status	Published - 1993 Dec 1
Event	Proceedings of the 1993 Spring Meeting of the Materials Research Society - San Francisco, CA, USA Duration: 1993 Apr 13 → 1993 Apr 15

Publication series

Name	Materials Research Society Symposium Proceedings
Volume	315
ISSN (Print)	0272-9172

Other

Other	Proceedings of the 1993 Spring Meeting of the Materials Research Society
City	San Francisco, CA, USA
Period	93/4/13 → 93/4/15

ASJC Scopus subject areas

Materials Science(all)
Condensed Matter Physics
Mechanics of Materials
Mechanical Engineering

Cite this

Niwano, M., Kurita, K., & Miyamoto, N. (1993). Hydrogen termination of the NH₄F treated Si(111) surface studied by photoemission and surface infrared spectroscopy. In G. S. Higashi, E. A. Irene, & T. Ohmi (Eds.), Surface Chemical Cleaning and Passivation for Semiconductor Processing (pp. 505-510). (Materials Research Society Symposium Proceedings; Vol. 315). Publ by Materials Research Society.

Hydrogen termination of the NH₄F treated Si(111) surface studied by photoemission and surface infrared spectroscopy. / Niwano, Michio; Kurita, Kazunari; Miyamoto, Nobuo.
Surface Chemical Cleaning and Passivation for Semiconductor Processing. ed. / Gregg S. Higashi; Eugene A. Irene; Tadahiro Ohmi. Publ by Materials Research Society, 1993. p. 505-510 (Materials Research Society Symposium Proceedings; Vol. 315).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Niwano, M, Kurita, K & Miyamoto, N 1993, Hydrogen termination of the NH₄F treated Si(111) surface studied by photoemission and surface infrared spectroscopy. in GS Higashi, EA Irene & T Ohmi (eds), Surface Chemical Cleaning and Passivation for Semiconductor Processing. Materials Research Society Symposium Proceedings, vol. 315, Publ by Materials Research Society, pp. 505-510, Proceedings of the 1993 Spring Meeting of the Materials Research Society, San Francisco, CA, USA, 93/4/13.

Niwano, Michio ; Kurita, Kazunari ; Miyamoto, Nobuo. / Hydrogen termination of the NH₄F treated Si(111) surface studied by photoemission and surface infrared spectroscopy. Surface Chemical Cleaning and Passivation for Semiconductor Processing. editor / Gregg S. Higashi ; Eugene A. Irene ; Tadahiro Ohmi. Publ by Materials Research Society, 1993. pp. 505-510 (Materials Research Society Symposium Proceedings).

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abstract = "The Si(111) surface treated in NH4F has been investigated using photoemission and surface infrared spectroscopy (SIS). We confirm both with photoemission and SIS measurements that the NH4F-treated Si(111) surface is dominantly terminated with the monohydride Si (Si-H) oriented perpendicular to the surface and is free from silicon oxide. Photoemission and SIS data also demonstrate that ammonium fluorides react with the Si substrate to generate the hexafluorosilicate salt, (NH4)2SiF6. We propose that the formation of (NH4)2SiF6 or SiF62- ions plays an important role in the NH4F etching of Si crystals.",

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N2 - The Si(111) surface treated in NH4F has been investigated using photoemission and surface infrared spectroscopy (SIS). We confirm both with photoemission and SIS measurements that the NH4F-treated Si(111) surface is dominantly terminated with the monohydride Si (Si-H) oriented perpendicular to the surface and is free from silicon oxide. Photoemission and SIS data also demonstrate that ammonium fluorides react with the Si substrate to generate the hexafluorosilicate salt, (NH4)2SiF6. We propose that the formation of (NH4)2SiF6 or SiF62- ions plays an important role in the NH4F etching of Si crystals.

AB - The Si(111) surface treated in NH4F has been investigated using photoemission and surface infrared spectroscopy (SIS). We confirm both with photoemission and SIS measurements that the NH4F-treated Si(111) surface is dominantly terminated with the monohydride Si (Si-H) oriented perpendicular to the surface and is free from silicon oxide. Photoemission and SIS data also demonstrate that ammonium fluorides react with the Si substrate to generate the hexafluorosilicate salt, (NH4)2SiF6. We propose that the formation of (NH4)2SiF6 or SiF62- ions plays an important role in the NH4F etching of Si crystals.

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