Hysteretic current-voltage characteristics and resistance switching at an epitaxial oxide Schottky junction SrRuO3/SrTi0.99Nb0.01O3

T. Fujii; M. Kawasaki; A. Sawa; H. Akoh; Y. Kawazoe; Y. Tokura

doi:10.1063/1.1845598

Hysteretic current-voltage characteristics and resistance switching at an epitaxial oxide Schottky junction SrRuO3/SrTi0.99Nb0.01O3

T. Fujii, M. Kawasaki, A. Sawa, H. Akoh, Y. Kawazoe, Y. Tokura

New Industry Creation Hatchery Center (NICHe)

Research output: Contribution to journal › Article › peer-review

351 Citations (Scopus)

Abstract

Transport properties have been studied for a perovskite heterojunction consisting of SrRu O3 (SRO) film epitaxially grown on Sr Ti0.99 Nb0.01 O3 (Nb:STO) substrate. The SRO/Nb:STO interface exhibits rectifying current-voltage (I-V) characteristics agreeing with those of a Schottky junction composed of a deep work-function metal (SRO) and an n -type semiconductor (Nb:STO). A hysteresis appears in the I-V characteristics, where high resistance and low resistance states are induced by reverse and forward bias stresses, respectively. The resistance switching is also triggered by applying short voltage pulses of 1 μs-10 ms duration.

Original language	English
Article number	012107
Pages (from-to)	012107-1-012107-3
Journal	Applied Physics Letters
Volume	86
Issue number	1
DOIs	https://doi.org/10.1063/1.1845598
Publication status	Published - 2005 Jan

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abstract = "Transport properties have been studied for a perovskite heterojunction consisting of SrRu O3 (SRO) film epitaxially grown on Sr Ti0.99 Nb0.01 O3 (Nb:STO) substrate. The SRO/Nb:STO interface exhibits rectifying current-voltage (I-V) characteristics agreeing with those of a Schottky junction composed of a deep work-function metal (SRO) and an n -type semiconductor (Nb:STO). A hysteresis appears in the I-V characteristics, where high resistance and low resistance states are induced by reverse and forward bias stresses, respectively. The resistance switching is also triggered by applying short voltage pulses of 1 μs-10 ms duration.",

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AU - Fujii, T.

AU - Kawasaki, M.

AU - Sawa, A.

AU - Akoh, H.

AU - Kawazoe, Y.

AU - Tokura, Y.

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N2 - Transport properties have been studied for a perovskite heterojunction consisting of SrRu O3 (SRO) film epitaxially grown on Sr Ti0.99 Nb0.01 O3 (Nb:STO) substrate. The SRO/Nb:STO interface exhibits rectifying current-voltage (I-V) characteristics agreeing with those of a Schottky junction composed of a deep work-function metal (SRO) and an n -type semiconductor (Nb:STO). A hysteresis appears in the I-V characteristics, where high resistance and low resistance states are induced by reverse and forward bias stresses, respectively. The resistance switching is also triggered by applying short voltage pulses of 1 μs-10 ms duration.

AB - Transport properties have been studied for a perovskite heterojunction consisting of SrRu O3 (SRO) film epitaxially grown on Sr Ti0.99 Nb0.01 O3 (Nb:STO) substrate. The SRO/Nb:STO interface exhibits rectifying current-voltage (I-V) characteristics agreeing with those of a Schottky junction composed of a deep work-function metal (SRO) and an n -type semiconductor (Nb:STO). A hysteresis appears in the I-V characteristics, where high resistance and low resistance states are induced by reverse and forward bias stresses, respectively. The resistance switching is also triggered by applying short voltage pulses of 1 μs-10 ms duration.

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Hysteretic current-voltage characteristics and resistance switching at an epitaxial oxide Schottky junction SrRuO3/SrTi0.99Nb0.01O3

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