Identification of extremely radiative nature of AlN by time-resolved photoluminescence

T. Onuma; K. Hazu; A. Uedono; T. Sota; S. F. Chichibu

doi:10.1063/1.3284653

Identification of extremely radiative nature of AlN by time-resolved photoluminescence

T. Onuma, K. Hazu, A. Uedono, T. Sota, S. F. Chichibu

IMRAM - Division of Measurements

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Abstract

Extremely radiative nature of high-quality AlN single crystalline epilayers was identified by means of far ultraviolet time-resolved photoluminescence using a frequency-quadrupled femtosecond Al₂ O₃:Ti laser. The gross radiative lifetimes of a free excitonic polariton emission as short as 10 ps at 7 K and 180 ps at 300 K were revealed, which are the shortest ever reported for bulk semiconductor materials.

Original language	English
Article number	061906
Journal	Applied Physics Letters
Volume	96
Issue number	6
DOIs	https://doi.org/10.1063/1.3284653
Publication status	Published - 2010

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10.1063/1.3284653

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title = "Identification of extremely radiative nature of AlN by time-resolved photoluminescence",

abstract = "Extremely radiative nature of high-quality AlN single crystalline epilayers was identified by means of far ultraviolet time-resolved photoluminescence using a frequency-quadrupled femtosecond Al2 O3:Ti laser. The gross radiative lifetimes of a free excitonic polariton emission as short as 10 ps at 7 K and 180 ps at 300 K were revealed, which are the shortest ever reported for bulk semiconductor materials.",

author = "T. Onuma and K. Hazu and A. Uedono and T. Sota and Chichibu, {S. F.}",

note = "Funding Information: The principal author S.F.C. would like to thank Professor C. Weisbuch for the fruitful discussion. This work was supported in part by Grant-in-Aids of Scientific Research in Priority Area No. 18069001 under MEXT, Japan.",

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T1 - Identification of extremely radiative nature of AlN by time-resolved photoluminescence

AU - Onuma, T.

AU - Hazu, K.

AU - Uedono, A.

AU - Sota, T.

AU - Chichibu, S. F.

N1 - Funding Information: The principal author S.F.C. would like to thank Professor C. Weisbuch for the fruitful discussion. This work was supported in part by Grant-in-Aids of Scientific Research in Priority Area No. 18069001 under MEXT, Japan.

PY - 2010

Y1 - 2010

N2 - Extremely radiative nature of high-quality AlN single crystalline epilayers was identified by means of far ultraviolet time-resolved photoluminescence using a frequency-quadrupled femtosecond Al2 O3:Ti laser. The gross radiative lifetimes of a free excitonic polariton emission as short as 10 ps at 7 K and 180 ps at 300 K were revealed, which are the shortest ever reported for bulk semiconductor materials.

AB - Extremely radiative nature of high-quality AlN single crystalline epilayers was identified by means of far ultraviolet time-resolved photoluminescence using a frequency-quadrupled femtosecond Al2 O3:Ti laser. The gross radiative lifetimes of a free excitonic polariton emission as short as 10 ps at 7 K and 180 ps at 300 K were revealed, which are the shortest ever reported for bulk semiconductor materials.

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JF - Applied Physics Letters

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ER -

Identification of extremely radiative nature of AlN by time-resolved photoluminescence

Abstract

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