Identification of ultra-fine Ti-rich precipitates in V-Cr-Ti alloys irradiated below 300 °C by using positron CDB technique

Ken ichi Fukumoto; Hideki Matsui; Hideaki Ohkubo; Zheng Tang; Yasuyoshi Nagai; Masayuki Hasegawa

doi:10.1016/j.jnucmat.2007.06.009

Identification of ultra-fine Ti-rich precipitates in V-Cr-Ti alloys irradiated below 300 °C by using positron CDB technique

Ken ichi Fukumoto, Hideki Matsui, Hideaki Ohkubo, Zheng Tang, Yasuyoshi Nagai, Masayuki Hasegawa

IMR - Materials Design Division

Research output: Contribution to journal › Article › peer-review

12 Citations (Scopus)

Abstract

Irradiation-induced Ti-rich precipitates in V-Ti and V-4Cr-4Ti alloys are studied by TEM and positron annihilation methods (positron lifetime, and coincidence Doppler broadening (CDB)). The characteristics of small defect clusters formed in V alloys containing Ti at irradiation temperatures below 300 °C have not been identified by TEM techniques. Strong interaction between vacancy and Ti solute atoms for irradiated V alloys containing Ti at irradiation temperatures from 220 to 350 °C are observed by positron lifetime measurement. The vacancy-multi Ti solute complexes in V-alloys containing Ti are definitely identified by using CDB measurement. It is suggested that ultra-fine Ti-rich precipitates or Ti segregation at periphery of dislocation loops are formed in V alloys containing Ti at irradiation temperatures below 300 °C.

Original language	English
Pages (from-to)	289-294
Number of pages	6
Journal	Journal of Nuclear Materials
Volume	373
Issue number	1-3
DOIs	https://doi.org/10.1016/j.jnucmat.2007.06.009
Publication status	Published - 2008 Feb 15

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10.1016/j.jnucmat.2007.06.009

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title = "Identification of ultra-fine Ti-rich precipitates in V-Cr-Ti alloys irradiated below 300 °C by using positron CDB technique",

abstract = "Irradiation-induced Ti-rich precipitates in V-Ti and V-4Cr-4Ti alloys are studied by TEM and positron annihilation methods (positron lifetime, and coincidence Doppler broadening (CDB)). The characteristics of small defect clusters formed in V alloys containing Ti at irradiation temperatures below 300 °C have not been identified by TEM techniques. Strong interaction between vacancy and Ti solute atoms for irradiated V alloys containing Ti at irradiation temperatures from 220 to 350 °C are observed by positron lifetime measurement. The vacancy-multi Ti solute complexes in V-alloys containing Ti are definitely identified by using CDB measurement. It is suggested that ultra-fine Ti-rich precipitates or Ti segregation at periphery of dislocation loops are formed in V alloys containing Ti at irradiation temperatures below 300 °C.",

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T1 - Identification of ultra-fine Ti-rich precipitates in V-Cr-Ti alloys irradiated below 300 °C by using positron CDB technique

AU - Fukumoto, Ken ichi

AU - Matsui, Hideki

AU - Ohkubo, Hideaki

AU - Tang, Zheng

AU - Nagai, Yasuyoshi

AU - Hasegawa, Masayuki

PY - 2008/2/15

Y1 - 2008/2/15

N2 - Irradiation-induced Ti-rich precipitates in V-Ti and V-4Cr-4Ti alloys are studied by TEM and positron annihilation methods (positron lifetime, and coincidence Doppler broadening (CDB)). The characteristics of small defect clusters formed in V alloys containing Ti at irradiation temperatures below 300 °C have not been identified by TEM techniques. Strong interaction between vacancy and Ti solute atoms for irradiated V alloys containing Ti at irradiation temperatures from 220 to 350 °C are observed by positron lifetime measurement. The vacancy-multi Ti solute complexes in V-alloys containing Ti are definitely identified by using CDB measurement. It is suggested that ultra-fine Ti-rich precipitates or Ti segregation at periphery of dislocation loops are formed in V alloys containing Ti at irradiation temperatures below 300 °C.

AB - Irradiation-induced Ti-rich precipitates in V-Ti and V-4Cr-4Ti alloys are studied by TEM and positron annihilation methods (positron lifetime, and coincidence Doppler broadening (CDB)). The characteristics of small defect clusters formed in V alloys containing Ti at irradiation temperatures below 300 °C have not been identified by TEM techniques. Strong interaction between vacancy and Ti solute atoms for irradiated V alloys containing Ti at irradiation temperatures from 220 to 350 °C are observed by positron lifetime measurement. The vacancy-multi Ti solute complexes in V-alloys containing Ti are definitely identified by using CDB measurement. It is suggested that ultra-fine Ti-rich precipitates or Ti segregation at periphery of dislocation loops are formed in V alloys containing Ti at irradiation temperatures below 300 °C.

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JO - Journal of Nuclear Materials

JF - Journal of Nuclear Materials

IS - 1-3

ER -

Identification of ultra-fine Ti-rich precipitates in V-Cr-Ti alloys irradiated below 300 °C by using positron CDB technique

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