III-nitride grating grown on freestanding HfO 2 gratings

Yongjin Wang, Tong Wu, Fangren Hu, Yoshiaki Kanamori, Hongbo Zhu, Kazuhiro Hane

Research output: Contribution to journalArticlepeer-review

3 Citations (Scopus)


We report here the epitaxial growth of III-nitride material on freestanding HfO 2 gratings by molecular beam epitaxy. Freestanding HfO 2 gratings are fabricated by combining film evaporation, electron beam lithography, and fast atom beam etching of an HfO 2 film by a front-side silicon process. The 60-μm long HfO 2 grating beam can sustain the stress change during the epitaxial growth of a III-nitride material. Grating structures locally change the growth condition and vary indium composition in the InGaN/GaN quantum wells and thus, the photoluminescence spectra of epitaxial III-nitride grating are tuned. Guided mode resonances are experimentally demonstrated in fabricated III-nitride gratings, opening the possibility to achieve the interaction between the excited light and the grating structure through guided mode resonance.

Original languageEnglish
Article number497
Pages (from-to)1-5
Number of pages5
JournalNanoscale Research Letters
Publication statusPublished - 2011


  • Fast atom beam etching
  • InGaN/GaN QWs
  • Molecular beam epitaxy


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