TY - JOUR
T1 - III-nitride grating grown on freestanding HfO 2 gratings
AU - Wang, Yongjin
AU - Wu, Tong
AU - Hu, Fangren
AU - Kanamori, Yoshiaki
AU - Zhu, Hongbo
AU - Hane, Kazuhiro
N1 - Funding Information:
This work was partially supported by the JSPS Research Project (19106007 and P09070) and the NJUPT Research Project (NY211001).
PY - 2011
Y1 - 2011
N2 - We report here the epitaxial growth of III-nitride material on freestanding HfO 2 gratings by molecular beam epitaxy. Freestanding HfO 2 gratings are fabricated by combining film evaporation, electron beam lithography, and fast atom beam etching of an HfO 2 film by a front-side silicon process. The 60-μm long HfO 2 grating beam can sustain the stress change during the epitaxial growth of a III-nitride material. Grating structures locally change the growth condition and vary indium composition in the InGaN/GaN quantum wells and thus, the photoluminescence spectra of epitaxial III-nitride grating are tuned. Guided mode resonances are experimentally demonstrated in fabricated III-nitride gratings, opening the possibility to achieve the interaction between the excited light and the grating structure through guided mode resonance.
AB - We report here the epitaxial growth of III-nitride material on freestanding HfO 2 gratings by molecular beam epitaxy. Freestanding HfO 2 gratings are fabricated by combining film evaporation, electron beam lithography, and fast atom beam etching of an HfO 2 film by a front-side silicon process. The 60-μm long HfO 2 grating beam can sustain the stress change during the epitaxial growth of a III-nitride material. Grating structures locally change the growth condition and vary indium composition in the InGaN/GaN quantum wells and thus, the photoluminescence spectra of epitaxial III-nitride grating are tuned. Guided mode resonances are experimentally demonstrated in fabricated III-nitride gratings, opening the possibility to achieve the interaction between the excited light and the grating structure through guided mode resonance.
KW - Fast atom beam etching
KW - InGaN/GaN QWs
KW - Molecular beam epitaxy
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U2 - 10.1186/1556-276x-6-497
DO - 10.1186/1556-276x-6-497
M3 - Article
AN - SCOPUS:84862947787
SN - 1931-7573
VL - 6
SP - 1
EP - 5
JO - Nanoscale Research Letters
JF - Nanoscale Research Letters
M1 - 497
ER -