@inproceedings{e7d049cea9844475aa5e092701c0ec6c,
title = "III-V-N alloys grown by MOVPE in H 2 and N 2 mixed carrier gases",
abstract = "The MOVPE growth properties of GaAsN and InAsN in H 2 and N 2 mixed carrier gases are studied. The N contents of the GaAsN and InAsN films increase with increasing the N 2/(H 2+N 2) ratio in the H 2 and N 2 mixed carrier gas. The growth rate reduction of GaAsN films in higher N 2/(H 2+N 2) ratio is explained by the smaller diffusion coefficients of precursors. The pyrolysis of 1,1-dimethylhydrazine (DMHy) is investigated by a quadrupole mass spectrometer (QMS) that is combined with the MOVPE growth reactor. At lower temperatures, the pyrolysis of DMHy in H 2 carrier gas is higher than that in N 2 carrier gas. The results indicate that the higher N contents at the higher N 2/(H 2+N 2) ratios in the mixed carrier gases are attributed to the suppression of the decomposition of III-V-N films as NHx. The higher reactor pressure also exhibits higher N contents in each carrier gas. It is interpreted as the effect of the faster growth rates and the higher DMHy pyrolysis.",
keywords = "DMHy, III-V-N, MOCVD, MOVPE, alloy semiconductors, carrier gas, dilute nitrides, pyrolysis",
author = "S. Kuboya and Thieu, {Q. T.} and S. Sanorpim and Ryuji Katayama and K. Onabe",
year = "2012",
doi = "10.1117/12.907981",
language = "English",
isbn = "9780819489111",
series = "Proceedings of SPIE - The International Society for Optical Engineering",
booktitle = "Quantum Sensing and Nanophotonic Devices IX",
note = "Quantum Sensing and Nanophotonic Devices IX ; Conference date: 22-01-2012 Through 26-01-2012",
}