TY - JOUR
T1 - Imaging energy-, momentum-, and time-resolved distributions of photoinjected hot electrons in GaAs
AU - Kanasaki, Jun'ichi
AU - Tanimura, Hiroshi
AU - Tanimura, Katsumi
N1 - Publisher Copyright:
© 2014 American Physical Society.
PY - 2014/12/2
Y1 - 2014/12/2
N2 - Using time-and angle-resolved photoemission spectroscopy, we determine directly energy-, momentum-, and time-resolved distributions of hot electrons photoinjected into the conduction band of GaAs, a prototypical direct-gap semiconductor. The nascent distributions of photoinjected electrons are captured for different pump photon energies and polarization. The evolutions of hot electron distributions in ultrafast intervalley scattering processes are resolved in momentum space with fs-temporal resolution, revealing an intervalley transition time as short as 20 fs.
AB - Using time-and angle-resolved photoemission spectroscopy, we determine directly energy-, momentum-, and time-resolved distributions of hot electrons photoinjected into the conduction band of GaAs, a prototypical direct-gap semiconductor. The nascent distributions of photoinjected electrons are captured for different pump photon energies and polarization. The evolutions of hot electron distributions in ultrafast intervalley scattering processes are resolved in momentum space with fs-temporal resolution, revealing an intervalley transition time as short as 20 fs.
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U2 - 10.1103/PhysRevLett.113.237401
DO - 10.1103/PhysRevLett.113.237401
M3 - Article
AN - SCOPUS:84918496321
SN - 0031-9007
VL - 113
JO - Physical Review Letters
JF - Physical Review Letters
IS - 23
M1 - 237401
ER -