Abstract
The local density of states at cleaved cross-sectional surfaces of InAs/GaSb superlattices were investigated by low-temperature scanning tunneling microscopy and spectroscopy (LT-STM/STS) with atomic resolution. Broken-gap energy band profiles (the overlap of the conduction band of InAs and the valence band of GaSb) were clearly seen in the LT-STS spectra as a function of growth direction. Clear images of electron standing waves confined in the superlattice were also obtained.
| Original language | English |
|---|---|
| Pages (from-to) | 643-646 |
| Number of pages | 4 |
| Journal | Physica Status Solidi C: Conferences |
| Volume | 3 |
| Issue number | 3 |
| DOIs | |
| Publication status | Published - 2006 |
| Externally published | Yes |
| Event | 32nd International Symposium on Compound Semiconductors, ISCS-2005 - Rust, Germany Duration: 2005 Sept 18 → 2005 Sept 22 |
ASJC Scopus subject areas
- Condensed Matter Physics