Abstract
Low-temperature scanning tunneling microscopy described the local density of states (LDOS) at the molecular beam epitaxial grown InAs surface on a GaAs(111)A substrate. Standing wave phenomena were continuously observed when the dI/dV mapping was done simultaneously with topography in the conduction band and the LDOS waves were imaged at point defects and within nanostructures. A nonparabolic dispersion relation for the conduction band was observed when the wavelength was measured as a function of bias voltage. The wave features came from the Friedel oscillations of the two-dimensional electron gas in the semiconductor surface accumulation layer.
Original language | English |
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Pages (from-to) | 3384-3387 |
Number of pages | 4 |
Journal | Physical Review Letters |
Volume | 86 |
Issue number | 15 |
DOIs | |
Publication status | Published - 2001 Apr 9 |