Impact-ionization-induced noise in InGaAs-based 0.1-μm-gate HEMTs

N. Shigekawa, T. Furuta, T. Suemitsu, Y. Umeda

Research output: Contribution to journalConference articlepeer-review

5 Citations (Scopus)


Contribution of the impact ionization to the noise characteristics in InGaAs-based HEMTs was investigated by measuring the drain noise current and the electroluminescence (EL). In the measured spectral density of the drain noise current the 1/f noise becomes more significant at larger drain-bias voltage. Drain- and gate-bias-Voltage dependencies of the 1/f noise intensity were similar to those of the EL data. The similarity in the bias-voltage dependence provides the first experimental evidence for contribution of the impact-ionization-induced holes to the 1/f noise. Furthermore an expression for the relation between the concentration of the holes and the 1/f noise intensity was derived. The expression was consistent with the measured result.

Original languageEnglish
Pages (from-to)562-564
Number of pages3
JournalPhysica B: Condensed Matter
Issue number1-4
Publication statusPublished - 1999 Dec 1
EventProceedings of the 1999 11th International Conference on Nonequilibrium Carrier Dynamics in Semiconductors (HCIS-11) - Kyoto, Jpn
Duration: 1999 Jul 191999 Jul 23


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