Contribution of the impact ionization to the noise characteristics in InGaAs-based HEMTs was investigated by measuring the drain noise current and the electroluminescence (EL). In the measured spectral density of the drain noise current the 1/f noise becomes more significant at larger drain-bias voltage. Drain- and gate-bias-Voltage dependencies of the 1/f noise intensity were similar to those of the EL data. The similarity in the bias-voltage dependence provides the first experimental evidence for contribution of the impact-ionization-induced holes to the 1/f noise. Furthermore an expression for the relation between the concentration of the holes and the 1/f noise intensity was derived. The expression was consistent with the measured result.
|Number of pages
|Physica B: Condensed Matter
|Published - 1999 Dec 1
|Proceedings of the 1999 11th International Conference on Nonequilibrium Carrier Dynamics in Semiconductors (HCIS-11) - Kyoto, Jpn
Duration: 1999 Jul 19 → 1999 Jul 23