TY - GEN
T1 - Impact of Ar atom irradiation on the crystallinity of GaAs/Si interfaces fabricated by surface activated bonding at room temperature
AU - Ohno, Yutaka
AU - Miyagawa, Reina
AU - Yoshida, Hideto
AU - Takeda, Seiji
AU - Liang, Jianbo
AU - Shigekawa, Naoteru
N1 - Funding Information:
A part of this work was supported at the Laboratory of Alpha-Ray Emitters under the Inter-University Cooperative Research Program in IMR (No. 18M0045). STEM was performed at ISIR under the Cooperative Research Program of "Network Joint Research Center for Materials and Devices: Dynamic Alliance for Open Innovation Bridging Human, Environment and Materials" (No. 20183055).
Publisher Copyright:
© 2019 JSPS 191st Committee on Innovative Interface Bonding Technology.
PY - 2019/5
Y1 - 2019/5
N2 - Arsenic (As) vacancies are introduced beneath the GaAs surfaces irradiated by Ar atoms for surface activation, while As interstitials are co-introduced at deeper regions. After 673 K annealing, As vacancies disappear by the recombination with As interstitials, via the migration of As interstitials.
AB - Arsenic (As) vacancies are introduced beneath the GaAs surfaces irradiated by Ar atoms for surface activation, while As interstitials are co-introduced at deeper regions. After 673 K annealing, As vacancies disappear by the recombination with As interstitials, via the migration of As interstitials.
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U2 - 10.23919/LTB-3D.2019.8735300
DO - 10.23919/LTB-3D.2019.8735300
M3 - Conference contribution
AN - SCOPUS:85068408071
T3 - Proceedings of 2019 6th International Workshop on Low Temperature Bonding for 3D Integration, LTB-3D 2019
SP - 2
BT - Proceedings of 2019 6th International Workshop on Low Temperature Bonding for 3D Integration, LTB-3D 2019
PB - Institute of Electrical and Electronics Engineers Inc.
T2 - 6th International Workshop on Low Temperature Bonding for 3D Integration, LTB-3D 2019
Y2 - 21 May 2019 through 25 May 2019
ER -