Impact of defect density in Si bulk multicrystals on gettering effect of impurities

Isao Takahashi, Noritaka Usami, Ryusuke Yokoyama, Yoshitaro Nose, Kentaro Kutuskake, Kozo Fujiwara, Kazuo Nakajima

Research output: Contribution to journalArticlepeer-review

8 Citations (Scopus)


We investigated the impact of defect density in Si multicrystals on the efficiency of gettering of impurities. Samples with low defect density were prepared by controlling crystal growth and compared with those grown by a conventional cast method with high defect density. As a result, increment in minority carrier diffusion length after gettering can be enlarged by decreasing defect density. Therefore, control of microstructures in Si multicrystals by controlling crystal growth is concluded to be beneficial not only for improvement of macroscopic properties of as-grown samples but for realization of high-performance solar cells.

Original languageEnglish
Pages (from-to)8790-8792
Number of pages3
JournalJapanese Journal of Applied Physics
Issue number12
Publication statusPublished - 2008 Dec 19


  • Crystal growth
  • Defect
  • Gettering
  • Grain boundary
  • Impurity
  • Multicrystal
  • Solar cell


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