Impact of fin length on threshold voltage modulation by back bias for Independent double-gate tunnel fin field-effect transistors

W. Mizubayashi; K. Fukuda; T. Mori; K. Endo; Y. X. Liu; T. Matsukawa; S. O'Uchi; Y. Ishikawa; S. Migita; Y. Morita; A. Tanabe; J. Tsukada; H. Yamauchi; M. Masahara; H. Ota

doi:10.1016/j.sse.2015.04.011

Impact of fin length on threshold voltage modulation by back bias for Independent double-gate tunnel fin field-effect transistors

W. Mizubayashi, K. Fukuda, T. Mori, K. Endo, Y. X. Liu, T. Matsukawa, S. O'Uchi, Y. Ishikawa, S. Migita, Y. Morita, A. Tanabe, J. Tsukada, H. Yamauchi, M. Masahara, H. Ota

IFS - Global Collaborative Research and Education Center for Integrated Flow Science (IFS-GCORE)

National Institute of Advanced Industrial Science and Technology

Research output: Contribution to journal › Article › peer-review

3 Citations (Scopus)

Abstract

We investigated the impact of fin length (T_fin) on the threshold voltage (V_th) modulation by back bias (V_b) for independent double-gate (IDG) tunnel fin field-effect transistors (tFinFETs). It was found that V_th can be tuned by V_b for IDG tFinFETs regardless of T_fin, which can be explained by the back-gate-effect model of IDG FinFETs. For IDG tFinFETs, the slope (back-gate-effect factor (γ)) of V_th with respect to V_b increases with thinning T_fin. This means that T_fin thinning is effective for tuning V_th by V_b for IDG tFinFETs. Furthermore, it was demonstrated that this back-bias-effect is consistent with the results of device simulation using an advanced nonlocal band-to-band model.

Original language	English
Pages (from-to)	62-66
Number of pages	5
Journal	Solid-State Electronics
Volume	111
DOIs	https://doi.org/10.1016/j.sse.2015.04.011
Publication status	Published - 2015 Sept 1

Keywords

Back bias
Threshold voltage
Tunnel field-effect transistor (FET)

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10.1016/j.sse.2015.04.011

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Mizubayashi, W., Fukuda, K., Mori, T., Endo, K., Liu, Y. X., Matsukawa, T., O'Uchi, S., Ishikawa, Y., Migita, S., Morita, Y., Tanabe, A., Tsukada, J., Yamauchi, H., Masahara, M., & Ota, H. (2015). Impact of fin length on threshold voltage modulation by back bias for Independent double-gate tunnel fin field-effect transistors. Solid-State Electronics, 111, 62-66. https://doi.org/10.1016/j.sse.2015.04.011

@article{85fd19ced375427aa81650e3971d9bfd,

title = "Impact of fin length on threshold voltage modulation by back bias for Independent double-gate tunnel fin field-effect transistors",

abstract = "We investigated the impact of fin length (Tfin) on the threshold voltage (Vth) modulation by back bias (Vb) for independent double-gate (IDG) tunnel fin field-effect transistors (tFinFETs). It was found that Vth can be tuned by Vb for IDG tFinFETs regardless of Tfin, which can be explained by the back-gate-effect model of IDG FinFETs. For IDG tFinFETs, the slope (back-gate-effect factor (γ)) of Vth with respect to Vb increases with thinning Tfin. This means that Tfin thinning is effective for tuning Vth by Vb for IDG tFinFETs. Furthermore, it was demonstrated that this back-bias-effect is consistent with the results of device simulation using an advanced nonlocal band-to-band model.",

keywords = "Back bias, Threshold voltage, Tunnel field-effect transistor (FET)",

author = "W. Mizubayashi and K. Fukuda and T. Mori and K. Endo and Liu, {Y. X.} and T. Matsukawa and S. O'Uchi and Y. Ishikawa and S. Migita and Y. Morita and A. Tanabe and J. Tsukada and H. Yamauchi and M. Masahara and H. Ota",

note = "Funding Information: This research was granted by the Japan Society for the Promotion of Science (JSPS) through the “Funding Program for World-Leading Innovative R&D on Science and Technology (First Program),” initiated by the Council for Science and Technology Policy (CSTP). Publisher Copyright: {\textcopyright} 2015 Elsevier Ltd. All rights reserved.",

year = "2015",

month = sep,

day = "1",

doi = "10.1016/j.sse.2015.04.011",

language = "English",

volume = "111",

pages = "62--66",

journal = "Solid-State Electronics",

issn = "0038-1101",

publisher = "Elsevier Ltd.",

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Mizubayashi, W, Fukuda, K, Mori, T, Endo, K, Liu, YX, Matsukawa, T, O'Uchi, S, Ishikawa, Y, Migita, S, Morita, Y, Tanabe, A, Tsukada, J, Yamauchi, H, Masahara, M & Ota, H 2015, 'Impact of fin length on threshold voltage modulation by back bias for Independent double-gate tunnel fin field-effect transistors', Solid-State Electronics, vol. 111, pp. 62-66. https://doi.org/10.1016/j.sse.2015.04.011

TY - JOUR

T1 - Impact of fin length on threshold voltage modulation by back bias for Independent double-gate tunnel fin field-effect transistors

AU - Mizubayashi, W.

AU - Fukuda, K.

AU - Mori, T.

AU - Endo, K.

AU - Liu, Y. X.

AU - Matsukawa, T.

AU - O'Uchi, S.

AU - Ishikawa, Y.

AU - Migita, S.

AU - Morita, Y.

AU - Tanabe, A.

AU - Tsukada, J.

AU - Yamauchi, H.

AU - Masahara, M.

AU - Ota, H.

N1 - Funding Information: This research was granted by the Japan Society for the Promotion of Science (JSPS) through the “Funding Program for World-Leading Innovative R&D on Science and Technology (First Program),” initiated by the Council for Science and Technology Policy (CSTP). Publisher Copyright: © 2015 Elsevier Ltd. All rights reserved.

PY - 2015/9/1

Y1 - 2015/9/1

N2 - We investigated the impact of fin length (Tfin) on the threshold voltage (Vth) modulation by back bias (Vb) for independent double-gate (IDG) tunnel fin field-effect transistors (tFinFETs). It was found that Vth can be tuned by Vb for IDG tFinFETs regardless of Tfin, which can be explained by the back-gate-effect model of IDG FinFETs. For IDG tFinFETs, the slope (back-gate-effect factor (γ)) of Vth with respect to Vb increases with thinning Tfin. This means that Tfin thinning is effective for tuning Vth by Vb for IDG tFinFETs. Furthermore, it was demonstrated that this back-bias-effect is consistent with the results of device simulation using an advanced nonlocal band-to-band model.

AB - We investigated the impact of fin length (Tfin) on the threshold voltage (Vth) modulation by back bias (Vb) for independent double-gate (IDG) tunnel fin field-effect transistors (tFinFETs). It was found that Vth can be tuned by Vb for IDG tFinFETs regardless of Tfin, which can be explained by the back-gate-effect model of IDG FinFETs. For IDG tFinFETs, the slope (back-gate-effect factor (γ)) of Vth with respect to Vb increases with thinning Tfin. This means that Tfin thinning is effective for tuning Vth by Vb for IDG tFinFETs. Furthermore, it was demonstrated that this back-bias-effect is consistent with the results of device simulation using an advanced nonlocal band-to-band model.

KW - Back bias

KW - Threshold voltage

KW - Tunnel field-effect transistor (FET)

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U2 - 10.1016/j.sse.2015.04.011

DO - 10.1016/j.sse.2015.04.011

M3 - Article

AN - SCOPUS:84929626904

SN - 0038-1101

VL - 111

SP - 62

EP - 66

JO - Solid-State Electronics

JF - Solid-State Electronics

ER -

Impact of fin length on threshold voltage modulation by back bias for Independent double-gate tunnel fin field-effect transistors

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Keywords

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