Impact of Ge fraction modulation upon electrical characteristics of hole resonant tunneling diodes with Si/Strained Si1 - xGex/Si(100) heterostructure

Takahiro Seo; Masao Sakuraba; Junichi Murota

doi:10.1016/j.tsf.2008.08.037

Impact of Ge fraction modulation upon electrical characteristics of hole resonant tunneling diodes with Si/Strained Si_{1 - x}Ge_x/Si(100) heterostructure

Takahiro Seo, Masao Sakuraba, Junichi Murota

RIEC - Computing System Platforms Division

Tohoku University

Research output: Contribution to journal › Article › peer-review

7 Citations (Scopus)

Abstract

In order to improve p-type resonant tunneling diodes (RTD) with Si/strained Si_0.8Ge_0.2 heterostructures epitaxially grown on Si(100), effectiveness of Ge fraction modulation in the quantum well and a part of spacers was investigated. It was found that increase of the Ge fraction up to x = 0.30-0.42 effectively improves RTD characteristics even at high temperatures around 200 K.

Original language	English
Pages (from-to)	110-112
Number of pages	3
Journal	Thin Solid Films
Volume	517
Issue number	1
DOIs	https://doi.org/10.1016/j.tsf.2008.08.037
Publication status	Published - 2008 Nov 3

Keywords

Heterostructure
Negative differential conductance (NDC)
Quantum well
Resonant tunneling diode (RTD)
Si
SiGe
Strain

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10.1016/j.tsf.2008.08.037

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title = "Impact of Ge fraction modulation upon electrical characteristics of hole resonant tunneling diodes with Si/Strained Si1 - xGex/Si(100) heterostructure",

abstract = "In order to improve p-type resonant tunneling diodes (RTD) with Si/strained Si0.8Ge0.2 heterostructures epitaxially grown on Si(100), effectiveness of Ge fraction modulation in the quantum well and a part of spacers was investigated. It was found that increase of the Ge fraction up to x = 0.30-0.42 effectively improves RTD characteristics even at high temperatures around 200 K.",

keywords = "Heterostructure, Negative differential conductance (NDC), Quantum well, Resonant tunneling diode (RTD), Si, SiGe, Strain",

author = "Takahiro Seo and Masao Sakuraba and Junichi Murota",

note = "Funding Information: This work was partially supported by Grant-in-Aid for Scientific Research from the Ministry of Education, Culture, Sports, Science, and Technology of Japan.",

year = "2008",

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doi = "10.1016/j.tsf.2008.08.037",

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journal = "Thin Solid Films",

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T1 - Impact of Ge fraction modulation upon electrical characteristics of hole resonant tunneling diodes with Si/Strained Si1 - xGex/Si(100) heterostructure

AU - Seo, Takahiro

AU - Sakuraba, Masao

AU - Murota, Junichi

N1 - Funding Information: This work was partially supported by Grant-in-Aid for Scientific Research from the Ministry of Education, Culture, Sports, Science, and Technology of Japan.

PY - 2008/11/3

Y1 - 2008/11/3

N2 - In order to improve p-type resonant tunneling diodes (RTD) with Si/strained Si0.8Ge0.2 heterostructures epitaxially grown on Si(100), effectiveness of Ge fraction modulation in the quantum well and a part of spacers was investigated. It was found that increase of the Ge fraction up to x = 0.30-0.42 effectively improves RTD characteristics even at high temperatures around 200 K.

AB - In order to improve p-type resonant tunneling diodes (RTD) with Si/strained Si0.8Ge0.2 heterostructures epitaxially grown on Si(100), effectiveness of Ge fraction modulation in the quantum well and a part of spacers was investigated. It was found that increase of the Ge fraction up to x = 0.30-0.42 effectively improves RTD characteristics even at high temperatures around 200 K.

KW - Heterostructure

KW - Negative differential conductance (NDC)

KW - Quantum well

KW - Resonant tunneling diode (RTD)

KW - Si

KW - SiGe

KW - Strain

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DO - 10.1016/j.tsf.2008.08.037

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AN - SCOPUS:54849409166

SN - 0040-6090

VL - 517

SP - 110

EP - 112

JO - Thin Solid Films

JF - Thin Solid Films

IS - 1

ER -

Impact of Ge fraction modulation upon electrical characteristics of hole resonant tunneling diodes with Si/Strained Si_{1 - x}Ge_x/Si(100) heterostructure

Abstract

Keywords

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