In order to improve p-type resonant tunneling diodes (RTD) with Si/strained Si0.8Ge0.2 heterostructures epitaxially grown on Si(100), effectiveness of Ge fraction modulation in the quantum well and a part of spacers was investigated. It was found that increase of the Ge fraction up to x = 0.30-0.42 effectively improves RTD characteristics even at high temperatures around 200 K.
- Negative differential conductance (NDC)
- Quantum well
- Resonant tunneling diode (RTD)