Impact of granular work function variation in a gate electrode on low-frequency noise for fin field-effect transistors

Takashi Matsukawa; Koichi Fukuda; Yongxun Liu; Junichi Tsukada; Hiromi Yamauchi; Kazuhiko Endo; Yuki Ishikawa; Shin Ichi O'uchi; Shinji Migita; Yukinori Morita; Wataru Mizubayashi; Hiroyuki Ota; Meishoku Masahara

doi:10.7567/APEX.8.044201

Impact of granular work function variation in a gate electrode on low-frequency noise for fin field-effect transistors

Takashi Matsukawa, Koichi Fukuda, Yongxun Liu, Junichi Tsukada, Hiromi Yamauchi, Kazuhiko Endo, Yuki Ishikawa, Shin Ichi O'uchi, Shinji Migita, Yukinori Morita, Wataru Mizubayashi, Hiroyuki Ota, Meishoku Masahara

IFS - Global Collaborative Research and Education Center for Integrated Flow Science (IFS-GCORE)

National Institute of Advanced Industrial Science and Technology

Research output: Contribution to journal › Article › peer-review

8 Citations (Scopus)

Abstract

The impact of work function variation (WFV) in a metal gate (MG) electrode on low-frequency noise (LFN) is revealed for fin field-effect transistors (FinFETs). The LFN level is compared between the FinFETs having polycrystalline TiN and amorphous TaSiN MGs. The amorphous TaSiN MG exhibits a marked suppression of flicker noise in comparison with the TiN MG. The difference in the LFN level is correlated with the threshold voltage variability reflecting the WFV of the MG. By modeling the WFV of the TiN MG in the FinFET structure by three-dimensional device simulation, we clearly reveal the mechanism of the LFN increase by the WFV.

Original language	English
Article number	044201
Journal	Applied Physics Express
Volume	8
Issue number	4
DOIs	https://doi.org/10.7567/APEX.8.044201
Publication status	Published - 2015 Apr 1

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Matsukawa, T., Fukuda, K., Liu, Y., Tsukada, J., Yamauchi, H., Endo, K., Ishikawa, Y., O'uchi, S. I., Migita, S., Morita, Y., Mizubayashi, W., Ota, H., & Masahara, M. (2015). Impact of granular work function variation in a gate electrode on low-frequency noise for fin field-effect transistors. Applied Physics Express, 8(4), Article 044201. https://doi.org/10.7567/APEX.8.044201

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abstract = "The impact of work function variation (WFV) in a metal gate (MG) electrode on low-frequency noise (LFN) is revealed for fin field-effect transistors (FinFETs). The LFN level is compared between the FinFETs having polycrystalline TiN and amorphous TaSiN MGs. The amorphous TaSiN MG exhibits a marked suppression of flicker noise in comparison with the TiN MG. The difference in the LFN level is correlated with the threshold voltage variability reflecting the WFV of the MG. By modeling the WFV of the TiN MG in the FinFET structure by three-dimensional device simulation, we clearly reveal the mechanism of the LFN increase by the WFV.",

author = "Takashi Matsukawa and Koichi Fukuda and Yongxun Liu and Junichi Tsukada and Hiromi Yamauchi and Kazuhiko Endo and Yuki Ishikawa and O'uchi, {Shin Ichi} and Shinji Migita and Yukinori Morita and Wataru Mizubayashi and Hiroyuki Ota and Meishoku Masahara",

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AU - Matsukawa, Takashi

AU - Fukuda, Koichi

AU - Liu, Yongxun

AU - Tsukada, Junichi

AU - Yamauchi, Hiromi

AU - Endo, Kazuhiko

AU - Ishikawa, Yuki

AU - O'uchi, Shin Ichi

AU - Migita, Shinji

AU - Morita, Yukinori

AU - Mizubayashi, Wataru

AU - Ota, Hiroyuki

AU - Masahara, Meishoku

PY - 2015/4/1

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AB - The impact of work function variation (WFV) in a metal gate (MG) electrode on low-frequency noise (LFN) is revealed for fin field-effect transistors (FinFETs). The LFN level is compared between the FinFETs having polycrystalline TiN and amorphous TaSiN MGs. The amorphous TaSiN MG exhibits a marked suppression of flicker noise in comparison with the TiN MG. The difference in the LFN level is correlated with the threshold voltage variability reflecting the WFV of the MG. By modeling the WFV of the TiN MG in the FinFET structure by three-dimensional device simulation, we clearly reveal the mechanism of the LFN increase by the WFV.

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Impact of granular work function variation in a gate electrode on low-frequency noise for fin field-effect transistors

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