Impact of high-Temperature implantation of Mg ions into GaN

Masahiro Takahashi, Atsushi Tanaka, Yuto Ando, Hirotaka Watanabe, Manato Deki, Maki Kushimoto, Shugo Nitta, Yoshio Honda, Kohei Shima, Kazunobu Kojima, Shigefusa F. Chichibu, Hiroshi Amano

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8 Citations (Scopus)


Magnesium (Mg) ion implantation into gallium nitride (GaN) at 1000 °C is proposed. Since ion implantation and annealing occur simultaneously in high-Temperature implantation, it is considered that Mg ions can be introduced at an appropriate position upon their implantation. GaN vertical diodes implanted with Mg ions were fabricated and current-voltage measurements were performed. As a result, clear rectifying properties were confirmed in a sample that was implanted with Mg ions at 1000 °C and annealed after implantation. However, the sample subjected to Mg ion implantation at RT and annealed after implantation showed no clear rectification. These results show that high-Temperature implantation of Mg ions at 1000 °C reduces Mg ion implantation-induced damage and simultaneously activates Mg ions upon their implantation.

Original languageEnglish
Article number056502
JournalJapanese Journal of Applied Physics
Issue number5
Publication statusPublished - 2020 May 7


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