@inproceedings{ad3da71e7c6449beb5b6e0e7e0fca51a,
title = "Impact of interface micro-roughness on low frequency noise in (110) and (100) pMOSFETs",
abstract = "In this paper we describe the evaluation of the dependence of low frequency noise upon the micro-roughness of the surface in pMOSFETs, based on (100) and (110) oriented silicon. For the (110) surface, because RCA cleaning makes the surface rough, we developed a 5 step room temperature cleaning process which does not use alkaline solution. As a result a drop of more than a decade in 1/f noise level was achieved. This low noise level is further reduced by using the process of microwave-excited high-density plasma oxidation of the gate oxide instead of thermal oxidation. This reduction is also observed for a (100) surface if treated in the same way, but the magnitude of the drop is less.",
keywords = "1/f noise, MOSFET, Silicon, Surface micro-roughness, Surface orientation",
author = "P. Gaubert and A. Teramoto and T. Hamada and M. Yamamoto and K. Nii and H. Akahori and K. Kotani and T. Ohmi",
year = "2005",
month = aug,
day = "25",
doi = "10.1063/1.2036731",
language = "English",
isbn = "0735402671",
series = "AIP Conference Proceedings",
pages = "199--202",
booktitle = "NOISE AND FLUCTUATIONS",
note = "NOISE AND FLUCTUATIONS: 18th International Conference on Noise and Fluctuations - ICNF 2005 ; Conference date: 19-09-2005 Through 23-09-2005",
}