@inproceedings{c0e505d4afa649a3969a24747fbbcd89,
title = "Impact of new approach to improve MOSFETs performance with ultrathin gate insulator",
abstract = "In this study, we focus on the difference behavior of the gate-channel capacitance (Cgc) characteristics in the inversion-mode (IM) and the accumulation-mode (AM) SOI MOSFETs. We experimentally demonstrate that the gate-channel capacitance in the AM MOS device is obviously larger than that in IM MOS device using the same gate insulator on the same wafer. The increase of the Cgc in AM MOSFETs is much more remarkable as downscaling the gate insulator due to the different inversion and accumulation layer quantization effect and poly-Si gate depletion effect. As the result, the current drivability has been obviously improved in the AM MOSFETs resulted from its enhanced gate-channel capacitance compared with conventional IM MOSFETs.",
author = "Weitao Cheng and Akinobu Teramoto and Tadahiro Ohmi",
year = "2009",
doi = "10.1149/1.3117393",
language = "English",
isbn = "9781566777124",
series = "ECS Transactions",
publisher = "Electrochemical Society Inc.",
number = "4",
pages = "65--70",
booktitle = "ECS Transactions - Silicon-on-Insulator Technology and Devices 14 - 215th Meeting of the Electrochemical Society",
edition = "4",
note = "14th International Symposium on Silicon-On-Insulator Technology and Devices - 215th Meeting of the Electrochemical Society ; Conference date: 24-05-2009 Through 29-05-2009",
}