Impact of Si cap layer growth on surface segregation of P incorporated by atomic layer doping

Yohei Chiba, Masao Sakuraba, Bernd Tillack, Junichi Murota

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10 Citations (Scopus)


In atomic layer doping of P using an ultraclean low-pressure chemical vapor deposition (CVD), the relationship between surface segregation of P during Si cap layer growth at 450 °C with Si2H6 partial pressure of 3-20 Pa on P atomic layer formed on Si0.3Ge0.7/Si(100) and the incorporated P amount at initial position has been investigated. For higher Si2H6 partial pressure and for the initial P atom amount of P atomic layer below about 4 × 1014 cm- 2, the incorporated P atoms are almost confined within the 1 nm region around the heterostructure interface. The P amount is nearly the same as the initial one. For initial P atom amount higher than 4 × 1014 cm- 2, P segregation on surface is enhanced, and the incorporated P atom amount around the heterointerface tends to saturate to maximum value of about 4 × 1014 cm- 2. This maximum value decreases with decreasing Si2H6 partial pressure. These results suggest that the number of site at the heterointerface between Si cap layer and Si0.3Ge0.7 layer, in which P atoms are incorporated, is about 4 × 1014 cm- 2 and in the case of low Si2H6 surface coverage, the incorporated P atom amount at the heterointerface decreases due to surface segregation.

Original languageEnglish
Pages (from-to)S231-S233
JournalThin Solid Films
Issue number6 SUPPL. 1
Publication statusPublished - 2010 Jan 1


  • Atomic-layer doping
  • Chemical vapor deposition (CVD)
  • Ge
  • P
  • PH
  • Si
  • Si epitaxial growth
  • SiH


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