TY - JOUR
T1 - Impact of the use of xe on electrical properties in magnetron-sputtering deposited amorphous InGaZnO thin-film transistors
AU - Goto, Tetsuya
AU - Sugawa, Shigetoshi
AU - Ohmi, Tadahiro
PY - 2013/5
Y1 - 2013/5
N2 - The use of heavier noble gases such as Xe instead of the lighter Ar during the magnetron sputtering deposition of amorphous indium-gallium-zinc oxide films is introduced to the fabrication of their thin-film transistors. Higher mobility in the Xe case is observed; typically, the saturation-region field-effect mobility is increased from ̃10 cm2 V1 s-1 in the Ar case to ̃13 cm2 V-1 s-1 in the Xe case. The Hall mobility is also higher in the Xe case in the carrier density range of approximately 1017-1018 cm-3. These results suggest that the Xe sputtering can reduce film damage, and improve film quality.
AB - The use of heavier noble gases such as Xe instead of the lighter Ar during the magnetron sputtering deposition of amorphous indium-gallium-zinc oxide films is introduced to the fabrication of their thin-film transistors. Higher mobility in the Xe case is observed; typically, the saturation-region field-effect mobility is increased from ̃10 cm2 V1 s-1 in the Ar case to ̃13 cm2 V-1 s-1 in the Xe case. The Hall mobility is also higher in the Xe case in the carrier density range of approximately 1017-1018 cm-3. These results suggest that the Xe sputtering can reduce film damage, and improve film quality.
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U2 - 10.7567/JJAP.52.050203
DO - 10.7567/JJAP.52.050203
M3 - Article
AN - SCOPUS:84880866731
SN - 0021-4922
VL - 52
JO - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes
JF - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes
IS - 5 PART 1
M1 - 050203
ER -