Impact of valley polarization on the resistivity in two dimensions

K. Takashina, Y. Niida, V. T. Renard, A. Fujiwara, T. Fujisawa, K. Muraki, Y. Hirayama

Research output: Contribution to journalArticlepeer-review

8 Citations (Scopus)


We examine the temperature dependence of resistivity in a two-dimensional electron system formed in a silicon-on-insulator quantum well. The device allows us to tune the valley splitting continuously in addition to the electron density. Our data provide a global picture of how the resistivity and its temperature dependence change with valley polarization. At the boundary between valley-polarized and partially polarized regions, we demonstrate that there is an insulating contribution from spin-degenerate electrons occupying the upper valley-subband edge.

Original languageEnglish
Article number196403
JournalPhysical Review Letters
Issue number19
Publication statusPublished - 2011 May 11


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