Impact of work function optimized S/D silicide contact for high current drivability CMOS

Y. Nakao, R. Kuroda, H. Tanaka, T. Isogai, A. Teramoto, S. Sugawa, T. Ohmi

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

3 Citations (Scopus)


A formation process of the silicide/Si contact with low contact resistance in the source/drain (S/D) regions has been developed in order to reduce the S/D electrode series resistance of MOSFETs. Er that has a low Schottky barrier height (SBH) for electrons and Pd that has a low SBH for holes were selected to n+- and p+-Si, respectively. The silicide formation processes were carried out in N2 ambient from the Si-surface cleaning before the metal depositions to the silicidation anneal in order not to expose metal and Si region so as to prevent the oxidation. A W capping layer was formed on the Er-surface to prevent it from oxidation, since it is very easily oxidized because of its low work function. These silicides were applied to Metal-Oxide-Semiconductor Field Effect Transistors (MOSFETs), which improved the current drivability of n- and p-MOSFET due to the reduction of the S/D electrodes series resistance.

Original languageEnglish
Title of host publicationAdvanced Gate Stack, Source/Drain, and Channel Engineering for Si-Based CMOS 6
Subtitle of host publicationNew Materials, Processes, and Equipment
PublisherElectrochemical Society Inc.
Number of pages10
ISBN (Electronic)9781607681410
ISBN (Print)9781566777919
Publication statusPublished - 2010

Publication series

NameECS Transactions
ISSN (Print)1938-5862
ISSN (Electronic)1938-6737


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