Impacts of static and dynamic local bending of thinned Si chip on MOSFET performance in 3-D stacked LSI

H. Kino; J. C. Bea; M. Murugesan; K. W. Lee; T. Fukushima; M. Koyanagi; T. Tanaka

doi:10.1109/ECTC.2013.6575596

Impacts of static and dynamic local bending of thinned Si chip on MOSFET performance in 3-D stacked LSI

H. Kino, J. C. Bea, M. Murugesan, K. W. Lee, T. Fukushima, M. Koyanagi, T. Tanaka

Tohoku University

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

12 Citations (Scopus)

Abstract

A three-dimensional (3-D) LSI has many lots of through-Si vias (TSVs) and metal microbumps to achieve electrical connections between stacked thinned LSI chips, and also has organic adhesives to obtain completely bonded thinned LSI chips. However, these elements, especially microbumps and organic adhesives, induce static and dynamic local bending of the thinned LSI chips. In this study, for the first time, we investigated impacts of the static and dynamic local bending on MOSFET characteristics using a novel test structure.

Original language	English
Title of host publication	2013 IEEE 63rd Electronic Components and Technology Conference, ECTC 2013
Pages	360-365
Number of pages	6
DOIs	https://doi.org/10.1109/ECTC.2013.6575596
Publication status	Published - 2013
Event	2013 IEEE 63rd Electronic Components and Technology Conference, ECTC 2013 - Las Vegas, NV, United States Duration: 2013 May 28 → 2013 May 31

Publication series

Name	Proceedings - Electronic Components and Technology Conference
ISSN (Print)	0569-5503

Conference

Conference	2013 IEEE 63rd Electronic Components and Technology Conference, ECTC 2013
Country/Territory	United States
City	Las Vegas, NV
Period	13/5/28 → 13/5/31

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10.1109/ECTC.2013.6575596

Cite this

Kino, H., Bea, J. C., Murugesan, M., Lee, K. W., Fukushima, T., Koyanagi, M., & Tanaka, T. (2013). Impacts of static and dynamic local bending of thinned Si chip on MOSFET performance in 3-D stacked LSI. In 2013 IEEE 63rd Electronic Components and Technology Conference, ECTC 2013 (pp. 360-365). Article 6575596 (Proceedings - Electronic Components and Technology Conference). https://doi.org/10.1109/ECTC.2013.6575596

@inproceedings{91b73a8a6923464694a092e563b9a060,

title = "Impacts of static and dynamic local bending of thinned Si chip on MOSFET performance in 3-D stacked LSI",

abstract = "A three-dimensional (3-D) LSI has many lots of through-Si vias (TSVs) and metal microbumps to achieve electrical connections between stacked thinned LSI chips, and also has organic adhesives to obtain completely bonded thinned LSI chips. However, these elements, especially microbumps and organic adhesives, induce static and dynamic local bending of the thinned LSI chips. In this study, for the first time, we investigated impacts of the static and dynamic local bending on MOSFET characteristics using a novel test structure.",

author = "H. Kino and Bea, {J. C.} and M. Murugesan and Lee, {K. W.} and T. Fukushima and M. Koyanagi and T. Tanaka",

year = "2013",

doi = "10.1109/ECTC.2013.6575596",

language = "English",

isbn = "9781479902330",

series = "Proceedings - Electronic Components and Technology Conference",

pages = "360--365",

booktitle = "2013 IEEE 63rd Electronic Components and Technology Conference, ECTC 2013",

note = "2013 IEEE 63rd Electronic Components and Technology Conference, ECTC 2013 ; Conference date: 28-05-2013 Through 31-05-2013",

}

Kino, H, Bea, JC, Murugesan, M, Lee, KW, Fukushima, T, Koyanagi, M & Tanaka, T 2013, Impacts of static and dynamic local bending of thinned Si chip on MOSFET performance in 3-D stacked LSI. in 2013 IEEE 63rd Electronic Components and Technology Conference, ECTC 2013., 6575596, Proceedings - Electronic Components and Technology Conference, pp. 360-365, 2013 IEEE 63rd Electronic Components and Technology Conference, ECTC 2013, Las Vegas, NV, United States, 13/5/28. https://doi.org/10.1109/ECTC.2013.6575596

Impacts of static and dynamic local bending of thinned Si chip on MOSFET performance in 3-D stacked LSI. / Kino, H.; Bea, J. C.; Murugesan, M. et al.
2013 IEEE 63rd Electronic Components and Technology Conference, ECTC 2013. 2013. p. 360-365 6575596 (Proceedings - Electronic Components and Technology Conference).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

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AB - A three-dimensional (3-D) LSI has many lots of through-Si vias (TSVs) and metal microbumps to achieve electrical connections between stacked thinned LSI chips, and also has organic adhesives to obtain completely bonded thinned LSI chips. However, these elements, especially microbumps and organic adhesives, induce static and dynamic local bending of the thinned LSI chips. In this study, for the first time, we investigated impacts of the static and dynamic local bending on MOSFET characteristics using a novel test structure.

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BT - 2013 IEEE 63rd Electronic Components and Technology Conference, ECTC 2013

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Kino H, Bea JC, Murugesan M, Lee KW, Fukushima T, Koyanagi M et al. Impacts of static and dynamic local bending of thinned Si chip on MOSFET performance in 3-D stacked LSI. In 2013 IEEE 63rd Electronic Components and Technology Conference, ECTC 2013. 2013. p. 360-365. 6575596. (Proceedings - Electronic Components and Technology Conference). doi: 10.1109/ECTC.2013.6575596

Impacts of static and dynamic local bending of thinned Si chip on MOSFET performance in 3-D stacked LSI

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