Importance of lattice matching and surface arrangement for the helicon-wave-excited-plasma sputtering epitaxy of ZnO

T. Koyama; S. F. Chichibu

doi:10.1063/1.1739294

Importance of lattice matching and surface arrangement for the helicon-wave-excited-plasma sputtering epitaxy of ZnO

T. Koyama, S. F. Chichibu

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6 Citations (Scopus)

Abstract

The importance of both preparation of proper surface arrangement and lattice matching for the helicon-wave-excited-plasma sputtering epitaxy (HWPSE) of ZnO epilayers was discussed. It was found that all ZnO epilayers on the (0001) and (112̄0) Al₂O₃ substrates and on the (0001) AlN epitaxial template exhibited the c(0001) orientation growth. The use of in-plane uniaxially nearly lattice-matched (112̄0) Al₂O ₃ substrate enabled the fabrication of the a-axis locked, single-domain ZnO epilayers. Under the in-plane epitaxial relation, the single-domain growth was achieved on the (0001) Al₂O₃ substrate.

Original language	English
Pages (from-to)	7856-7861
Number of pages	6
Journal	Journal of Applied Physics
Volume	95
Issue number	12
DOIs	https://doi.org/10.1063/1.1739294
Publication status	Published - 2004 Jun 15
Externally published	Yes

ASJC Scopus subject areas

Physics and Astronomy(all)

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@article{7ff45740309942e8b994df709a175df2,

title = "Importance of lattice matching and surface arrangement for the helicon-wave-excited-plasma sputtering epitaxy of ZnO",

abstract = "The importance of both preparation of proper surface arrangement and lattice matching for the helicon-wave-excited-plasma sputtering epitaxy (HWPSE) of ZnO epilayers was discussed. It was found that all ZnO epilayers on the (0001) and (11{\=2}0) Al2O3 substrates and on the (0001) AlN epitaxial template exhibited the c(0001) orientation growth. The use of in-plane uniaxially nearly lattice-matched (11{\=2}0) Al2O 3 substrate enabled the fabrication of the a-axis locked, single-domain ZnO epilayers. Under the in-plane epitaxial relation, the single-domain growth was achieved on the (0001) Al2O3 substrate.",

author = "T. Koyama and Chichibu, {S. F.}",

year = "2004",

month = jun,

day = "15",

doi = "10.1063/1.1739294",

language = "English",

volume = "95",

pages = "7856--7861",

journal = "Journal of Applied Physics",

issn = "0021-8979",

publisher = "American Institute of Physics Publising LLC",

number = "12",

}

TY - JOUR

T1 - Importance of lattice matching and surface arrangement for the helicon-wave-excited-plasma sputtering epitaxy of ZnO

AU - Koyama, T.

AU - Chichibu, S. F.

PY - 2004/6/15

Y1 - 2004/6/15

N2 - The importance of both preparation of proper surface arrangement and lattice matching for the helicon-wave-excited-plasma sputtering epitaxy (HWPSE) of ZnO epilayers was discussed. It was found that all ZnO epilayers on the (0001) and (112̄0) Al2O3 substrates and on the (0001) AlN epitaxial template exhibited the c(0001) orientation growth. The use of in-plane uniaxially nearly lattice-matched (112̄0) Al2O 3 substrate enabled the fabrication of the a-axis locked, single-domain ZnO epilayers. Under the in-plane epitaxial relation, the single-domain growth was achieved on the (0001) Al2O3 substrate.

AB - The importance of both preparation of proper surface arrangement and lattice matching for the helicon-wave-excited-plasma sputtering epitaxy (HWPSE) of ZnO epilayers was discussed. It was found that all ZnO epilayers on the (0001) and (112̄0) Al2O3 substrates and on the (0001) AlN epitaxial template exhibited the c(0001) orientation growth. The use of in-plane uniaxially nearly lattice-matched (112̄0) Al2O 3 substrate enabled the fabrication of the a-axis locked, single-domain ZnO epilayers. Under the in-plane epitaxial relation, the single-domain growth was achieved on the (0001) Al2O3 substrate.

UR - http://www.scopus.com/inward/record.url?scp=3142535301&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=3142535301&partnerID=8YFLogxK

U2 - 10.1063/1.1739294

DO - 10.1063/1.1739294

M3 - Article

AN - SCOPUS:3142535301

SN - 0021-8979

VL - 95

SP - 7856

EP - 7861

JO - Journal of Applied Physics

JF - Journal of Applied Physics

IS - 12

ER -

Importance of lattice matching and surface arrangement for the helicon-wave-excited-plasma sputtering epitaxy of ZnO

Abstract

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