Imprint behavior of ferroelectric pb(zrti)o3 thin-film capacitors in the early stage

Soichiro Okamura; Soichiro Koshika; Hiromi Shima; Hroshi Naganuma

doi:10.1080/10584580802101075

Imprint behavior of ferroelectric pb(zrti)o3 thin-film capacitors in the early stage

Soichiro Okamura, Soichiro Koshika, Hiromi Shima, Hroshi Naganuma

Research output: Contribution to journal › Article › peer-review

2 Citations (Scopus)

Abstract

Imprint behavior of Pb(Zr,Ti)O3 (PZT) thin-film capacitors in the early stage was carefully measured. The PZT films were formed on Pt/Ti/SiO2/Si substrates by chemical solution deposition (CSD) with sintering at 700 C°, and a post-annealing was carried out at the same temperature after the deposition of top Pt electrodes by rf-magnetron sputtering. The imprint progresses of the PZT thin-film capacitors could be fitted by three equations with the same form, Vshift = V0 ln (1 + t/), but three diferent sets of parameters; V0 and. This indicates that the conduction mechanisms of space charges which caused imprint changed by three steps with time progress. The first mechanism had less temperature dependence while the second one had remarkable temperature dependence. Whether the third one had temperature dependence or not was not clear because of data points were too few, it impacted a longtime imprint. From these results, we speculated that the imprint progresses were controlled by charge injection from electrodes due to first Fowler-Nordheim and seconde Schottky-emission in interfacial layers, and finally Poole-Frenkel conduction in film bodies.

Original language	English
Pages (from-to)	90-99
Number of pages	10
Journal	Integrated Ferroelectrics
Volume	96
Issue number	1
DOIs	https://doi.org/10.1080/10584580802101075
Publication status	Published - 2008
Externally published	Yes

Keywords

Charge injection
Ferroelectric
Imprint
PZT
Thin-film capacitor

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Control and Systems Engineering
Ceramics and Composites
Condensed Matter Physics
Electrical and Electronic Engineering
Materials Chemistry

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10.1080/10584580802101075

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@article{9d4b6f5777ae49339ecf86b6540bec3c,

title = "Imprint behavior of ferroelectric pb(zrti)o3 thin-film capacitors in the early stage",

abstract = "Imprint behavior of Pb(Zr,Ti)O3 (PZT) thin-film capacitors in the early stage was carefully measured. The PZT films were formed on Pt/Ti/SiO2/Si substrates by chemical solution deposition (CSD) with sintering at 700 C°, and a post-annealing was carried out at the same temperature after the deposition of top Pt electrodes by rf-magnetron sputtering. The imprint progresses of the PZT thin-film capacitors could be fitted by three equations with the same form, Vshift = V0 ln (1 + t/), but three diferent sets of parameters; V0 and. This indicates that the conduction mechanisms of space charges which caused imprint changed by three steps with time progress. The first mechanism had less temperature dependence while the second one had remarkable temperature dependence. Whether the third one had temperature dependence or not was not clear because of data points were too few, it impacted a longtime imprint. From these results, we speculated that the imprint progresses were controlled by charge injection from electrodes due to first Fowler-Nordheim and seconde Schottky-emission in interfacial layers, and finally Poole-Frenkel conduction in film bodies.",

keywords = "Charge injection, Ferroelectric, Imprint, PZT, Thin-film capacitor",

author = "Soichiro Okamura and Soichiro Koshika and Hiromi Shima and Hroshi Naganuma",

note = "Funding Information: Imprint properties of Pt/PZT(200 nm)/Pt capacitors were carefully measured at the temperatures ranging from 50 to 100◦C.The voltage shift was measured at 40 points of time for 104 s from hysteresis loops acquired using a triangular wave form with an amplitude of 4 V. Our imprint results were not expressed by the single equation, and required to fit three equations with the same form; Vshift=V0(1+t/τ),butdifferentsetsofparameters;V0andτ.Thismeansthat the mechanism for the accumulation of space charges around interface changed by three steps with time progress. From the imprint data obtained from the measurement at different temperatures, it is found that the conduction mechanism for the first stage had less temperature dependence while the conduction mechanism for the second stage had significant temperature dependence. Considering the decrease in electric field on the interfacial layers, we finally speculated that the conduction mechanisms for the first, second and third stages were Fowler-Nordheim, Schottky-emission and Poole-Frenkel, respectively. This speculation has no contradiction with Tagantsev{\textquoteright}s report in which Poole-Frenkel was dominant for the longtime imprint because Poole-Frenkel becomes dominant in final stage even in our model. Our results support that both the interface and the film body affect the imprint behavior in ferroelectric thin-film capacitors. This work was partially supported by the Japan Society for the Promotion of Science, Grant-in-Aid for Scientific Research (C) 18560024, 2006.",

year = "2008",

doi = "10.1080/10584580802101075",

language = "English",

volume = "96",

pages = "90--99",

journal = "Integrated Ferroelectrics",

issn = "1058-4587",

publisher = "Taylor and Francis Ltd.",

number = "1",

}

TY - JOUR

T1 - Imprint behavior of ferroelectric pb(zrti)o3 thin-film capacitors in the early stage

AU - Okamura, Soichiro

AU - Koshika, Soichiro

AU - Shima, Hiromi

AU - Naganuma, Hroshi

N1 - Funding Information: Imprint properties of Pt/PZT(200 nm)/Pt capacitors were carefully measured at the temperatures ranging from 50 to 100◦C.The voltage shift was measured at 40 points of time for 104 s from hysteresis loops acquired using a triangular wave form with an amplitude of 4 V. Our imprint results were not expressed by the single equation, and required to fit three equations with the same form; Vshift=V0(1+t/τ),butdifferentsetsofparameters;V0andτ.Thismeansthat the mechanism for the accumulation of space charges around interface changed by three steps with time progress. From the imprint data obtained from the measurement at different temperatures, it is found that the conduction mechanism for the first stage had less temperature dependence while the conduction mechanism for the second stage had significant temperature dependence. Considering the decrease in electric field on the interfacial layers, we finally speculated that the conduction mechanisms for the first, second and third stages were Fowler-Nordheim, Schottky-emission and Poole-Frenkel, respectively. This speculation has no contradiction with Tagantsev’s report in which Poole-Frenkel was dominant for the longtime imprint because Poole-Frenkel becomes dominant in final stage even in our model. Our results support that both the interface and the film body affect the imprint behavior in ferroelectric thin-film capacitors. This work was partially supported by the Japan Society for the Promotion of Science, Grant-in-Aid for Scientific Research (C) 18560024, 2006.

PY - 2008

Y1 - 2008

N2 - Imprint behavior of Pb(Zr,Ti)O3 (PZT) thin-film capacitors in the early stage was carefully measured. The PZT films were formed on Pt/Ti/SiO2/Si substrates by chemical solution deposition (CSD) with sintering at 700 C°, and a post-annealing was carried out at the same temperature after the deposition of top Pt electrodes by rf-magnetron sputtering. The imprint progresses of the PZT thin-film capacitors could be fitted by three equations with the same form, Vshift = V0 ln (1 + t/), but three diferent sets of parameters; V0 and. This indicates that the conduction mechanisms of space charges which caused imprint changed by three steps with time progress. The first mechanism had less temperature dependence while the second one had remarkable temperature dependence. Whether the third one had temperature dependence or not was not clear because of data points were too few, it impacted a longtime imprint. From these results, we speculated that the imprint progresses were controlled by charge injection from electrodes due to first Fowler-Nordheim and seconde Schottky-emission in interfacial layers, and finally Poole-Frenkel conduction in film bodies.

AB - Imprint behavior of Pb(Zr,Ti)O3 (PZT) thin-film capacitors in the early stage was carefully measured. The PZT films were formed on Pt/Ti/SiO2/Si substrates by chemical solution deposition (CSD) with sintering at 700 C°, and a post-annealing was carried out at the same temperature after the deposition of top Pt electrodes by rf-magnetron sputtering. The imprint progresses of the PZT thin-film capacitors could be fitted by three equations with the same form, Vshift = V0 ln (1 + t/), but three diferent sets of parameters; V0 and. This indicates that the conduction mechanisms of space charges which caused imprint changed by three steps with time progress. The first mechanism had less temperature dependence while the second one had remarkable temperature dependence. Whether the third one had temperature dependence or not was not clear because of data points were too few, it impacted a longtime imprint. From these results, we speculated that the imprint progresses were controlled by charge injection from electrodes due to first Fowler-Nordheim and seconde Schottky-emission in interfacial layers, and finally Poole-Frenkel conduction in film bodies.

KW - Charge injection

KW - Ferroelectric

KW - Imprint

KW - PZT

KW - Thin-film capacitor

UR - http://www.scopus.com/inward/record.url?scp=66149131383&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=66149131383&partnerID=8YFLogxK

U2 - 10.1080/10584580802101075

DO - 10.1080/10584580802101075

M3 - Article

AN - SCOPUS:66149131383

SN - 1058-4587

VL - 96

SP - 90

EP - 99

JO - Integrated Ferroelectrics

JF - Integrated Ferroelectrics

IS - 1

ER -

Imprint behavior of ferroelectric pb(zrti)o3 thin-film capacitors in the early stage

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