Imprint behavior of ferroelectric pb(zrti)o3 thin-film capacitors in the early stage

Soichiro Okamura, Soichiro Koshika, Hiromi Shima, Hroshi Naganuma

Research output: Contribution to journalArticlepeer-review

2 Citations (Scopus)


Imprint behavior of Pb(Zr,Ti)O3 (PZT) thin-film capacitors in the early stage was carefully measured. The PZT films were formed on Pt/Ti/SiO2/Si substrates by chemical solution deposition (CSD) with sintering at 700 C°, and a post-annealing was carried out at the same temperature after the deposition of top Pt electrodes by rf-magnetron sputtering. The imprint progresses of the PZT thin-film capacitors could be fitted by three equations with the same form, Vshift = V0 ln (1 + t/), but three diferent sets of parameters; V0 and. This indicates that the conduction mechanisms of space charges which caused imprint changed by three steps with time progress. The first mechanism had less temperature dependence while the second one had remarkable temperature dependence. Whether the third one had temperature dependence or not was not clear because of data points were too few, it impacted a longtime imprint. From these results, we speculated that the imprint progresses were controlled by charge injection from electrodes due to first Fowler-Nordheim and seconde Schottky-emission in interfacial layers, and finally Poole-Frenkel conduction in film bodies.

Original languageEnglish
Pages (from-to)90-99
Number of pages10
JournalIntegrated Ferroelectrics
Issue number1
Publication statusPublished - 2008
Externally publishedYes


  • Charge injection
  • Ferroelectric
  • Imprint
  • PZT
  • Thin-film capacitor

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Control and Systems Engineering
  • Ceramics and Composites
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry


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