Improved C-V, I-V characteristics for co-polymerized organic liner in the Through-Silicon-Via for high frequency applications by post heat treatment

M. Murugesan; T. Fukushima; J. C. Bea; H. Hashimoto; Y. Sato; K. W. Lee; M. Koyanagi

doi:10.1109/ECTC.2015.7159574

Improved C-V, I-V characteristics for co-polymerized organic liner in the Through-Silicon-Via for high frequency applications by post heat treatment

M. Murugesan, T. Fukushima, J. C. Bea, H. Hashimoto, Y. Sato, K. W. Lee, M. Koyanagi

New Industry Creation Hatchery Center (NICHe)

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

4 Citations (Scopus)

Abstract

The effect of post-heat treatment of chemical-vapor-deposited polyimide (PI) liner along the Cu-TSV side-wall in the 3D-LSI chips was investigated for leakage current, parasitic capacitance and thermal stability by analyzing current-voltage (I-V), capacitance-voltage (C-V), and x-ray photo-electron spectroscopy (XPS) data. From the I-V data it is inferred that the post heat treatment of 250 nm-thick PI at 200 °C has tremendously suppressed the leak current as compared to the leak current in the pristine PI film. In the case of annealed PI the leak current was minimized to nearly half for the stress voltage of up to ±20 V, whereas it was reduced by nearly three (3) orders for the stress value of ±40 V. The post annealing process also suppresses the hysteresis, and this effect is pronounced for the thicker film.

Original language	English
Title of host publication	2015 IEEE 65th Electronic Components and Technology Conference, ECTC 2015
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	73-77
Number of pages	5
ISBN (Electronic)	9781479986095
DOIs	https://doi.org/10.1109/ECTC.2015.7159574
Publication status	Published - 2015 Jul 15
Event	2015 65th IEEE Electronic Components and Technology Conference, ECTC 2015 - San Diego, United States Duration: 2015 May 26 → 2015 May 29

Publication series

Name	Proceedings - Electronic Components and Technology Conference
Volume	2015-July
ISSN (Print)	0569-5503

Other

Other	2015 65th IEEE Electronic Components and Technology Conference, ECTC 2015
Country/Territory	United States
City	San Diego
Period	15/5/26 → 15/5/29

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering

Access to Document

10.1109/ECTC.2015.7159574

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Murugesan, M., Fukushima, T., Bea, J. C., Hashimoto, H., Sato, Y., Lee, K. W., & Koyanagi, M. (2015). Improved C-V, I-V characteristics for co-polymerized organic liner in the Through-Silicon-Via for high frequency applications by post heat treatment. In 2015 IEEE 65th Electronic Components and Technology Conference, ECTC 2015 (pp. 73-77). [7159574] (Proceedings - Electronic Components and Technology Conference; Vol. 2015-July). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/ECTC.2015.7159574

Improved C-V, I-V characteristics for co-polymerized organic liner in the Through-Silicon-Via for high frequency applications by post heat treatment. / Murugesan, M.; Fukushima, T.; Bea, J. C. et al.
2015 IEEE 65th Electronic Components and Technology Conference, ECTC 2015. Institute of Electrical and Electronics Engineers Inc., 2015. p. 73-77 7159574 (Proceedings - Electronic Components and Technology Conference; Vol. 2015-July).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Murugesan, M, Fukushima, T , Bea, JC, Hashimoto, H, Sato, Y, Lee, KW & Koyanagi, M 2015, Improved C-V, I-V characteristics for co-polymerized organic liner in the Through-Silicon-Via for high frequency applications by post heat treatment. in 2015 IEEE 65th Electronic Components and Technology Conference, ECTC 2015., 7159574, Proceedings - Electronic Components and Technology Conference, vol. 2015-July, Institute of Electrical and Electronics Engineers Inc., pp. 73-77, 2015 65th IEEE Electronic Components and Technology Conference, ECTC 2015, San Diego, United States, 15/5/26. https://doi.org/10.1109/ECTC.2015.7159574

Murugesan M, Fukushima T , Bea JC, Hashimoto H, Sato Y, Lee KW et al. Improved C-V, I-V characteristics for co-polymerized organic liner in the Through-Silicon-Via for high frequency applications by post heat treatment. In 2015 IEEE 65th Electronic Components and Technology Conference, ECTC 2015. Institute of Electrical and Electronics Engineers Inc. 2015. p. 73-77. 7159574. (Proceedings - Electronic Components and Technology Conference). doi: 10.1109/ECTC.2015.7159574

Murugesan, M. ; Fukushima, T. ; Bea, J. C. et al. / Improved C-V, I-V characteristics for co-polymerized organic liner in the Through-Silicon-Via for high frequency applications by post heat treatment. 2015 IEEE 65th Electronic Components and Technology Conference, ECTC 2015. Institute of Electrical and Electronics Engineers Inc., 2015. pp. 73-77 (Proceedings - Electronic Components and Technology Conference).

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title = "Improved C-V, I-V characteristics for co-polymerized organic liner in the Through-Silicon-Via for high frequency applications by post heat treatment",

abstract = "The effect of post-heat treatment of chemical-vapor-deposited polyimide (PI) liner along the Cu-TSV side-wall in the 3D-LSI chips was investigated for leakage current, parasitic capacitance and thermal stability by analyzing current-voltage (I-V), capacitance-voltage (C-V), and x-ray photo-electron spectroscopy (XPS) data. From the I-V data it is inferred that the post heat treatment of 250 nm-thick PI at 200 °C has tremendously suppressed the leak current as compared to the leak current in the pristine PI film. In the case of annealed PI the leak current was minimized to nearly half for the stress voltage of up to ±20 V, whereas it was reduced by nearly three (3) orders for the stress value of ±40 V. The post annealing process also suppresses the hysteresis, and this effect is pronounced for the thicker film.",

author = "M. Murugesan and T. Fukushima and Bea, {J. C.} and H. Hashimoto and Y. Sato and Lee, {K. W.} and M. Koyanagi",

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AU - Murugesan, M.

AU - Fukushima, T.

AU - Bea, J. C.

AU - Hashimoto, H.

AU - Sato, Y.

AU - Lee, K. W.

AU - Koyanagi, M.

PY - 2015/7/15

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N2 - The effect of post-heat treatment of chemical-vapor-deposited polyimide (PI) liner along the Cu-TSV side-wall in the 3D-LSI chips was investigated for leakage current, parasitic capacitance and thermal stability by analyzing current-voltage (I-V), capacitance-voltage (C-V), and x-ray photo-electron spectroscopy (XPS) data. From the I-V data it is inferred that the post heat treatment of 250 nm-thick PI at 200 °C has tremendously suppressed the leak current as compared to the leak current in the pristine PI film. In the case of annealed PI the leak current was minimized to nearly half for the stress voltage of up to ±20 V, whereas it was reduced by nearly three (3) orders for the stress value of ±40 V. The post annealing process also suppresses the hysteresis, and this effect is pronounced for the thicker film.

AB - The effect of post-heat treatment of chemical-vapor-deposited polyimide (PI) liner along the Cu-TSV side-wall in the 3D-LSI chips was investigated for leakage current, parasitic capacitance and thermal stability by analyzing current-voltage (I-V), capacitance-voltage (C-V), and x-ray photo-electron spectroscopy (XPS) data. From the I-V data it is inferred that the post heat treatment of 250 nm-thick PI at 200 °C has tremendously suppressed the leak current as compared to the leak current in the pristine PI film. In the case of annealed PI the leak current was minimized to nearly half for the stress voltage of up to ±20 V, whereas it was reduced by nearly three (3) orders for the stress value of ±40 V. The post annealing process also suppresses the hysteresis, and this effect is pronounced for the thicker film.

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Improved C-V, I-V characteristics for co-polymerized organic liner in the Through-Silicon-Via for high frequency applications by post heat treatment

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