Improved carrier confinement by a buried p-layer in the AlGaN/GaN HEMT structure

Kenji Shiojima; Naoteru Shigekawa; Tetsuya Suemitsu

Improved carrier confinement by a buried p-layer in the AlGaN/GaN HEMT structure

Kenji Shiojima, Naoteru Shigekawa, Tetsuya Suemitsu

New Industry Creation Hatchery Center (NICHe)

Nippon Telegraph & Telephone

Research output: Contribution to journal › Article › peer-review

5 Citations (Scopus)

Abstract

The authors have demonstrated AlGaN/GaN HEMTs with lightly-doped buried p-layers under the channel for the first time. A 1.5-μm-gate device showed good pinch-off characteristics, g_m of 25 mS/mm, and breakdown voltage of 70-90 V. Carrier confinement by the p-n junction was confirmed by capacitance-voltage measurements. These results indicate the potential of p-layer insertion into GaN-based FETs.

Original language	English
Pages (from-to)	1968-1970
Number of pages	3
Journal	IEICE Transactions on Electronics
Volume	E83-C
Issue number	12
Publication status	Published - 2000 Dec

Cite this

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abstract = "The authors have demonstrated AlGaN/GaN HEMTs with lightly-doped buried p-layers under the channel for the first time. A 1.5-μm-gate device showed good pinch-off characteristics, gm of 25 mS/mm, and breakdown voltage of 70-90 V. Carrier confinement by the p-n junction was confirmed by capacitance-voltage measurements. These results indicate the potential of p-layer insertion into GaN-based FETs.",

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Y1 - 2000/12

N2 - The authors have demonstrated AlGaN/GaN HEMTs with lightly-doped buried p-layers under the channel for the first time. A 1.5-μm-gate device showed good pinch-off characteristics, gm of 25 mS/mm, and breakdown voltage of 70-90 V. Carrier confinement by the p-n junction was confirmed by capacitance-voltage measurements. These results indicate the potential of p-layer insertion into GaN-based FETs.

AB - The authors have demonstrated AlGaN/GaN HEMTs with lightly-doped buried p-layers under the channel for the first time. A 1.5-μm-gate device showed good pinch-off characteristics, gm of 25 mS/mm, and breakdown voltage of 70-90 V. Carrier confinement by the p-n junction was confirmed by capacitance-voltage measurements. These results indicate the potential of p-layer insertion into GaN-based FETs.

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ER -

Improved carrier confinement by a buried p-layer in the AlGaN/GaN HEMT structure

Abstract

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