Improved microstructure and ohmic contact of Nb electrode on n-type 4H-SiC

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Niobium was deposited as an electrode material on an n-type SiC wafer for power device application. The reaction microstructure and electrical contact property were investigated after annealing at 700 to 1000 °C and compared with the results for an Ni electrode. Microstructure-related problems of the Ni electrode could be resolved without sacrificing ohmic contact behavior with a low contact resistivity of 1.53 × 10 - 4 Ω cm 2. Carbon precipitation was completely eliminated with Nb by the formation of carbides, leading to good adhesion upon wire bonding process. At the reaction interface, Nb 5Si 3 was formed in an epitaxial relationship with SiC, leading to a good interface contact property as well as good interface adhesion.

Original languageEnglish
Pages (from-to)6922-6928
Number of pages7
JournalThin Solid Films
Issue number23
Publication statusPublished - 2012 Sept 30


  • Interfacial reaction
  • Niobium
  • Ohmic contact
  • Raman spectroscopy
  • Secondary ion mass spectroscopy
  • Silicon carbide
  • X-ray diffraction


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