TY - JOUR
T1 - Improved performance of organic light-emitting device with anatase TiO 2 anode
AU - Nakano, Masaki
AU - Fukumura, Tomoteru
AU - Toyosaki, Hidemi
AU - Ueno, Kazunori
AU - Kawasaki, Masashi
PY - 2008/2/15
Y1 - 2008/2/15
N2 - An organic light-emitting device (OLED) with a Nb-doped anatase TiO 2 thin film on a LaAlO3 substrate as an anode shows higher performance than OLEDs with a rutile TiO2 anode. The OLED structure is TiO2/poly(3,4-ethylene dioxythiophene): polystyrene sulfonate) (PEDOT:PSS)/N,N′-di-[(1-naphthalenyl)-N,N″-diphenyl]-( 1,1′-biphenyl)-4,4′-diamine (α-NPD)/tris-(8-hydroxyquinoline) aluminum (Alq3)/LiF/Al. The maximum luminance is about 3200 cd/m 2 at 20V, and the current efficiency is approximately 2-3 cd/A, which is comparable to that of a reference OLED with an Sn-doped In2O 3 (ITO) anode. We speculate that the improvement of the OLED performance comes from the low resistivity with a relatively low electron density of anatase TiO2.
AB - An organic light-emitting device (OLED) with a Nb-doped anatase TiO 2 thin film on a LaAlO3 substrate as an anode shows higher performance than OLEDs with a rutile TiO2 anode. The OLED structure is TiO2/poly(3,4-ethylene dioxythiophene): polystyrene sulfonate) (PEDOT:PSS)/N,N′-di-[(1-naphthalenyl)-N,N″-diphenyl]-( 1,1′-biphenyl)-4,4′-diamine (α-NPD)/tris-(8-hydroxyquinoline) aluminum (Alq3)/LiF/Al. The maximum luminance is about 3200 cd/m 2 at 20V, and the current efficiency is approximately 2-3 cd/A, which is comparable to that of a reference OLED with an Sn-doped In2O 3 (ITO) anode. We speculate that the improvement of the OLED performance comes from the low resistivity with a relatively low electron density of anatase TiO2.
KW - Anode
KW - Carrier mobility
KW - Hole injection barrier
KW - Nb-doped anatase TiO
KW - Organic light-emitting device
KW - Oxide semiconductor
UR - http://www.scopus.com/inward/record.url?scp=54249106796&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=54249106796&partnerID=8YFLogxK
U2 - 10.1143/JJAP.47.1276
DO - 10.1143/JJAP.47.1276
M3 - Article
AN - SCOPUS:54249106796
SN - 0021-4922
VL - 47
SP - 1276
EP - 1278
JO - Japanese Journal of Applied Physics
JF - Japanese Journal of Applied Physics
IS - 2 PART 2
ER -