Improved performance of organic light-emitting device with anatase TiO 2 anode

Masaki Nakano, Tomoteru Fukumura, Hidemi Toyosaki, Kazunori Ueno, Masashi Kawasaki

Research output: Contribution to journalArticlepeer-review

1 Citation (Scopus)

Abstract

An organic light-emitting device (OLED) with a Nb-doped anatase TiO 2 thin film on a LaAlO3 substrate as an anode shows higher performance than OLEDs with a rutile TiO2 anode. The OLED structure is TiO2/poly(3,4-ethylene dioxythiophene): polystyrene sulfonate) (PEDOT:PSS)/N,N′-di-[(1-naphthalenyl)-N,N″-diphenyl]-( 1,1′-biphenyl)-4,4′-diamine (α-NPD)/tris-(8-hydroxyquinoline) aluminum (Alq3)/LiF/Al. The maximum luminance is about 3200 cd/m 2 at 20V, and the current efficiency is approximately 2-3 cd/A, which is comparable to that of a reference OLED with an Sn-doped In2O 3 (ITO) anode. We speculate that the improvement of the OLED performance comes from the low resistivity with a relatively low electron density of anatase TiO2.

Original languageEnglish
Pages (from-to)1276-1278
Number of pages3
JournalJapanese Journal of Applied Physics
Volume47
Issue number2 PART 2
DOIs
Publication statusPublished - 2008 Feb 15

Keywords

  • Anode
  • Carrier mobility
  • Hole injection barrier
  • Nb-doped anatase TiO
  • Organic light-emitting device
  • Oxide semiconductor

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