An organic light-emitting device (OLED) with a Nb-doped anatase TiO 2 thin film on a LaAlO3 substrate as an anode shows higher performance than OLEDs with a rutile TiO2 anode. The OLED structure is TiO2/poly(3,4-ethylene dioxythiophene): polystyrene sulfonate) (PEDOT:PSS)/N,N′-di-[(1-naphthalenyl)-N,N″-diphenyl]-( 1,1′-biphenyl)-4,4′-diamine (α-NPD)/tris-(8-hydroxyquinoline) aluminum (Alq3)/LiF/Al. The maximum luminance is about 3200 cd/m 2 at 20V, and the current efficiency is approximately 2-3 cd/A, which is comparable to that of a reference OLED with an Sn-doped In2O 3 (ITO) anode. We speculate that the improvement of the OLED performance comes from the low resistivity with a relatively low electron density of anatase TiO2.
- Carrier mobility
- Hole injection barrier
- Nb-doped anatase TiO
- Organic light-emitting device
- Oxide semiconductor