Improved quantum efficiency in nonpolar (1120) AlGaN/GaN quantum wells grown on GaN prepared by lateral epitaxial overgrowth

T. Koida; S. F. Chichibu; T. Sota; M. D. Craven; B. A. Haskell; J. S. Speck; S. P. DenBaars; S. Nakamura

doi:10.1063/1.1738185

Improved quantum efficiency in nonpolar (1120) AlGaN/GaN quantum wells grown on GaN prepared by lateral epitaxial overgrowth

T. Koida, S. F. Chichibu, T. Sota, M. D. Craven, B. A. Haskell, J. S. Speck, S. P. DenBaars, S. Nakamura

IMRAM - Division of Measurements

Research output: Contribution to journal › Article › peer-review

59 Citations (Scopus)

Abstract

The use of GAN templates, prepared by lateral epitaxial overgrowth (LEO) method, for improving quantum efficiency in nonpolar (112̄o) AlGaN/GaN multiple quantum wells (MQW), was investigated. The polarized optical reflectance (OR) and photoluminescence (PL) spectra of LEO-GaN were analyzed for the study. A moderate shift of the photoluminescence (PL) peak energy and negligible change in low-temperature Pl lifetime with decreasing well width were observed. Both phenomena were found to be the results of eliminating quantum-confined Stark effects due to the polarization fields that existed in polar (0001) MQWs.

Original language	English
Pages (from-to)	3768-3770
Number of pages	3
Journal	Applied Physics Letters
Volume	84
Issue number	19
DOIs	https://doi.org/10.1063/1.1738185
Publication status	Published - 2004 May 10

Access to Document

10.1063/1.1738185

Cite this

@article{cd53b1d839954c9593a3966665c947bc,

title = "Improved quantum efficiency in nonpolar (1120) AlGaN/GaN quantum wells grown on GaN prepared by lateral epitaxial overgrowth",

abstract = "The use of GAN templates, prepared by lateral epitaxial overgrowth (LEO) method, for improving quantum efficiency in nonpolar (11{\=2}o) AlGaN/GaN multiple quantum wells (MQW), was investigated. The polarized optical reflectance (OR) and photoluminescence (PL) spectra of LEO-GaN were analyzed for the study. A moderate shift of the photoluminescence (PL) peak energy and negligible change in low-temperature Pl lifetime with decreasing well width were observed. Both phenomena were found to be the results of eliminating quantum-confined Stark effects due to the polarization fields that existed in polar (0001) MQWs.",

author = "T. Koida and Chichibu, {S. F.} and T. Sota and Craven, {M. D.} and Haskell, {B. A.} and Speck, {J. S.} and DenBaars, {S. P.} and S. Nakamura",

year = "2004",

month = may,

day = "10",

doi = "10.1063/1.1738185",

language = "English",

volume = "84",

pages = "3768--3770",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics",

number = "19",

}

TY - JOUR

T1 - Improved quantum efficiency in nonpolar (1120) AlGaN/GaN quantum wells grown on GaN prepared by lateral epitaxial overgrowth

AU - Koida, T.

AU - Chichibu, S. F.

AU - Sota, T.

AU - Craven, M. D.

AU - Haskell, B. A.

AU - Speck, J. S.

AU - DenBaars, S. P.

AU - Nakamura, S.

PY - 2004/5/10

Y1 - 2004/5/10

N2 - The use of GAN templates, prepared by lateral epitaxial overgrowth (LEO) method, for improving quantum efficiency in nonpolar (112̄o) AlGaN/GaN multiple quantum wells (MQW), was investigated. The polarized optical reflectance (OR) and photoluminescence (PL) spectra of LEO-GaN were analyzed for the study. A moderate shift of the photoluminescence (PL) peak energy and negligible change in low-temperature Pl lifetime with decreasing well width were observed. Both phenomena were found to be the results of eliminating quantum-confined Stark effects due to the polarization fields that existed in polar (0001) MQWs.

AB - The use of GAN templates, prepared by lateral epitaxial overgrowth (LEO) method, for improving quantum efficiency in nonpolar (112̄o) AlGaN/GaN multiple quantum wells (MQW), was investigated. The polarized optical reflectance (OR) and photoluminescence (PL) spectra of LEO-GaN were analyzed for the study. A moderate shift of the photoluminescence (PL) peak energy and negligible change in low-temperature Pl lifetime with decreasing well width were observed. Both phenomena were found to be the results of eliminating quantum-confined Stark effects due to the polarization fields that existed in polar (0001) MQWs.

UR - http://www.scopus.com/inward/record.url?scp=2942549636&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=2942549636&partnerID=8YFLogxK

U2 - 10.1063/1.1738185

DO - 10.1063/1.1738185

M3 - Article

AN - SCOPUS:2942549636

SN - 0003-6951

VL - 84

SP - 3768

EP - 3770

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 19

ER -

Improved quantum efficiency in nonpolar (1120) AlGaN/GaN quantum wells grown on GaN prepared by lateral epitaxial overgrowth

Abstract

Access to Document

Other files and links

Fingerprint

Cite this