TY - JOUR
T1 - Improved room temperature electron mobility in self-buffered anatase TiO2 epitaxial thin film grown at low temperature
AU - Krasienapibal, Thantip S.
AU - Fukumura, Tomoteru
AU - Hirose, Yasushi
AU - Hasegawa, Tetsuya
PY - 2014
Y1 - 2014
N2 - Anatase TiO2(001) epitaxial thin films were grown on LaAlO 3(001) substrate self-buffered with 5-monolayer-thick insulating TiO2 by pulsed laser deposition. The use of self-buffer layer enabled the layer-by-layer growth down to 200 °C resulting in the decreased surface roughness. The carrier density of self-buffered films was controlled as a function of oxygen pressure during the growth within a range of 10 19cm-3. The electron mobility at 300K of self-buffered film grown at the optimal condition was improved to be 18.6 cm 2·V-1·s-1 in comparison with that of non-buffered TiO2 thin film <5cm2·V -1·s-1.
AB - Anatase TiO2(001) epitaxial thin films were grown on LaAlO 3(001) substrate self-buffered with 5-monolayer-thick insulating TiO2 by pulsed laser deposition. The use of self-buffer layer enabled the layer-by-layer growth down to 200 °C resulting in the decreased surface roughness. The carrier density of self-buffered films was controlled as a function of oxygen pressure during the growth within a range of 10 19cm-3. The electron mobility at 300K of self-buffered film grown at the optimal condition was improved to be 18.6 cm 2·V-1·s-1 in comparison with that of non-buffered TiO2 thin film <5cm2·V -1·s-1.
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U2 - 10.7567/JJAP.53.090305
DO - 10.7567/JJAP.53.090305
M3 - Article
AN - SCOPUS:84906858334
SN - 0021-4922
VL - 53
JO - Japanese Journal of Applied Physics
JF - Japanese Journal of Applied Physics
IS - 9
M1 - 090305
ER -