Improved surface morphology in GaN homoepitaxy by NH 3-source molecular-beam epitaxy

T. Koida; Y. Uchinuma; J. Kikuchi; K. R. Wang; M. Terazaki; T. Onuma; J. F. Keading; R. Sharma; S. Nakamura; S. F. Chichibu

doi:10.1116/1.1775202

Improved surface morphology in GaN homoepitaxy by NH ₃-source molecular-beam epitaxy

T. Koida, Y. Uchinuma, J. Kikuchi, K. R. Wang, M. Terazaki, T. Onuma, J. F. Keading, R. Sharma, S. Nakamura, S. F. Chichibu

IMRAM - Division of Measurements

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Abstract

GaN homoepitaxial layers of improved surface morphology were studied by a NH ₃-source molecular beam epitaxy method. The surface flatness was maintained by depositing the 'flux-modulated' GaN prior to the high-temperature growth. The results show that, proper feeding of reactive NH ₃ and the insertion of pregrowth FM-GaN improve the surface morphology, Hall mobility, and PL qualities of GaN homoepitaxial layers grown by NH ₃-MBE on the GaN/(0001) Al ₂O ₃. It was also found that the increased feeding of thermally activated NH ₃ on the growing surface greatly reduced the surface roughness of the epilayers.

Original language	English
Pages (from-to)	2158-2164
Number of pages	7
Journal	Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
Volume	22
Issue number	4
DOIs	https://doi.org/10.1116/1.1775202
Publication status	Published - 2004 Jul

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title = "Improved surface morphology in GaN homoepitaxy by NH 3-source molecular-beam epitaxy",

abstract = "GaN homoepitaxial layers of improved surface morphology were studied by a NH 3-source molecular beam epitaxy method. The surface flatness was maintained by depositing the 'flux-modulated' GaN prior to the high-temperature growth. The results show that, proper feeding of reactive NH 3 and the insertion of pregrowth FM-GaN improve the surface morphology, Hall mobility, and PL qualities of GaN homoepitaxial layers grown by NH 3-MBE on the GaN/(0001) Al 2O 3. It was also found that the increased feeding of thermally activated NH 3 on the growing surface greatly reduced the surface roughness of the epilayers.",

author = "T. Koida and Y. Uchinuma and J. Kikuchi and Wang, {K. R.} and M. Terazaki and T. Onuma and Keading, {J. F.} and R. Sharma and S. Nakamura and Chichibu, {S. F.}",

year = "2004",

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doi = "10.1116/1.1775202",

language = "English",

volume = "22",

pages = "2158--2164",

journal = "Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures",

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TY - JOUR

T1 - Improved surface morphology in GaN homoepitaxy by NH 3-source molecular-beam epitaxy

AU - Koida, T.

AU - Uchinuma, Y.

AU - Kikuchi, J.

AU - Wang, K. R.

AU - Terazaki, M.

AU - Onuma, T.

AU - Keading, J. F.

AU - Sharma, R.

AU - Nakamura, S.

AU - Chichibu, S. F.

PY - 2004/7

Y1 - 2004/7

N2 - GaN homoepitaxial layers of improved surface morphology were studied by a NH 3-source molecular beam epitaxy method. The surface flatness was maintained by depositing the 'flux-modulated' GaN prior to the high-temperature growth. The results show that, proper feeding of reactive NH 3 and the insertion of pregrowth FM-GaN improve the surface morphology, Hall mobility, and PL qualities of GaN homoepitaxial layers grown by NH 3-MBE on the GaN/(0001) Al 2O 3. It was also found that the increased feeding of thermally activated NH 3 on the growing surface greatly reduced the surface roughness of the epilayers.

AB - GaN homoepitaxial layers of improved surface morphology were studied by a NH 3-source molecular beam epitaxy method. The surface flatness was maintained by depositing the 'flux-modulated' GaN prior to the high-temperature growth. The results show that, proper feeding of reactive NH 3 and the insertion of pregrowth FM-GaN improve the surface morphology, Hall mobility, and PL qualities of GaN homoepitaxial layers grown by NH 3-MBE on the GaN/(0001) Al 2O 3. It was also found that the increased feeding of thermally activated NH 3 on the growing surface greatly reduced the surface roughness of the epilayers.

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JO - Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

JF - Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

IS - 4

ER -

Improved surface morphology in GaN homoepitaxy by NH ₃-source molecular-beam epitaxy

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